MRF5007R1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF5007R1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 200 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 VCossⓘ - Capacitancia de salida: 63 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.111 Ohm
Paquete / Cubierta: CASE430B-02
Búsqueda de reemplazo de MOSFET MRF5007R1
MRF5007R1 Datasheet (PDF)
mrf5007 mrf5007r1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5007/DThe RF MOSFET LineMRF5007RF Power Field Effect TransistorMRF5007R1NChannel EnhancementModeThe MRF5007 is designed for broadband commercial and industrial7.0 W, 7.5 Vdcapplications at frequencies to 520 MHz. The high gain and broadband512 MHzperformance of this device makes it ideal for largesig
mrf5007rev2.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5007/DThe RF MOSFET LineMRF5007RF Power Field Effect TransistorMRF5007R1NChannel EnhancementModeThe MRF5007 is designed for broadband commercial and industrial7.0 W, 7.5 Vdcapplications at frequencies to 520 MHz. The high gain and broadband512 MHzperformance of this device makes it ideal for largesig
mrf5007r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5007/DThe RF MOSFET LineMRF5007RF Power Field Effect TransistorNChannel EnhancementModeThe MRF5007 is designed for broadband commercial and industrial7.0 W, 7.5 Vdcapplications at frequencies to 520 MHz. The high gain and broadband512 MHzperformance of this device makes it ideal for largesignal, common
mrf5007.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5007/DThe RF MOSFET LineMRF5007RF Power Field Effect TransistorNChannel EnhancementModeThe MRF5007 is designed for broadband commercial and industrial7.0 W, 7.5 Vdcapplications at frequencies to 520 MHz. The high gain and broadband512 MHzperformance of this device makes it ideal for largesignal, common
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918