MRF5007R1 - Даташиты. Аналоги. Основные параметры

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor MRF5007R1 N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large sig

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor MRF5007R1 N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large sig

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large signal, common

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large signal, common