BRCS030N10SHBD Todos los transistores

 

BRCS030N10SHBD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BRCS030N10SHBD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 260 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 212 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 76 nC
   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 3240 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: TO-263

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BRCS030N10SHBD Datasheet (PDF)

 ..1. Size:2147K  blue-rocket-elect
brcs030n10shbd.pdf

BRCS030N10SHBD BRCS030N10SHBD

BRCS030N10SHBD Rev.A Sep.-2022 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , Ultra Low On-Resistance,fast switching,HF Product. / Applications BMS High frequency switching and synchronous r

 2.1. Size:2275K  blue-rocket-elect
brcs030n10shra.pdf

BRCS030N10SHBD BRCS030N10SHBD

BRCS030N10SHRA Rev.B Sep.-2022 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications BMS High frequency switching and synchronous rectification,BMS,Motor.

 6.1. Size:1057K  blue-rocket-elect
brcs030n06sbd.pdf

BRCS030N10SHBD BRCS030N10SHBD

BRCS030N06SBD Rev.A Dec.-2021 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , Ultra Low On-Resistance,fast switching,Halogen-free Product. / Applications PFC

 6.2. Size:1578K  blue-rocket-elect
brcs030n03dp.pdf

BRCS030N10SHBD BRCS030N10SHBD

BRCS030N03DP Rev.A Jul.-2023 ATA SHEET / Descriptions TO-252 N MOS N-Channel Enhancement Mode Field Effect Transistor in a TO-252 Plastic Package. / Features V (V) = 30V I =135 A (V = 20V) DS D GS RDS(ON)@10V3mR(Typ.2.3mR) RDS(ON)@4.5V5mR(Typ.3.1mR) HF Product. / Applications

 6.3. Size:1066K  blue-rocket-elect
brcs030n03zc.pdf

BRCS030N10SHBD BRCS030N10SHBD

BRCS030N03ZC Rev.C Sep.-2022 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;H

 6.4. Size:1837K  blue-rocket-elect
brcs030n04dp.pdf

BRCS030N10SHBD BRCS030N10SHBD

BRCS030N04DP Rev.A Feb.-2023 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow R ,low gate charge, low C , fast switching, HF Product. DS(on) rss / Applications

 6.5. Size:1328K  blue-rocket-elect
brcs030n06szc.pdf

BRCS030N10SHBD BRCS030N10SHBD

BRCS030N06SZC Rev.B Feb.-2023 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low R to minimize conductive loss;low Gate Charge for fast switching;Low Thermal DS(ON)resistan

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