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BRCS030N10SHBD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BRCS030N10SHBD
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 260 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 212 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 76 nC
   trⓘ - Время нарастания: 17 ns
   Cossⓘ - Выходная емкость: 3240 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для BRCS030N10SHBD

 

 

BRCS030N10SHBD Datasheet (PDF)

 ..1. Size:2147K  blue-rocket-elect
 brcs030n10shbd.pdf

BRCS030N10SHBD BRCS030N10SHBD

BRCS030N10SHBD Rev.A Sep.-2022 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , Ultra Low On-Resistance,fast switching,HF Product. / Applications BMS High frequency switching and synchronous r

 2.1. Size:2275K  blue-rocket-elect
 brcs030n10shra.pdf

BRCS030N10SHBD BRCS030N10SHBD

BRCS030N10SHRA Rev.B Sep.-2022 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications BMS High frequency switching and synchronous rectification,BMS,Motor.

 6.1. Size:1057K  blue-rocket-elect
 brcs030n06sbd.pdf

BRCS030N10SHBD BRCS030N10SHBD

BRCS030N06SBD Rev.A Dec.-2021 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , Ultra Low On-Resistance,fast switching,Halogen-free Product. / Applications PFC

 6.2. Size:1578K  blue-rocket-elect
 brcs030n03dp.pdf

BRCS030N10SHBD BRCS030N10SHBD

BRCS030N03DP Rev.A Jul.-2023 ATA SHEET / Descriptions TO-252 N MOS N-Channel Enhancement Mode Field Effect Transistor in a TO-252 Plastic Package. / Features V (V) = 30V I =135 A (V = 20V) DS D GS RDS(ON)@10V3mR(Typ.2.3mR) RDS(ON)@4.5V5mR(Typ.3.1mR) HF Product. / Applications

 6.3. Size:1066K  blue-rocket-elect
 brcs030n03zc.pdf

BRCS030N10SHBD BRCS030N10SHBD

BRCS030N03ZC Rev.C Sep.-2022 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;H

 6.4. Size:1837K  blue-rocket-elect
 brcs030n04dp.pdf

BRCS030N10SHBD BRCS030N10SHBD

BRCS030N04DP Rev.A Feb.-2023 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow R ,low gate charge, low C , fast switching, HF Product. DS(on) rss / Applications

 6.5. Size:1328K  blue-rocket-elect
 brcs030n06szc.pdf

BRCS030N10SHBD BRCS030N10SHBD

BRCS030N06SZC Rev.B Feb.-2023 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low R to minimize conductive loss;low Gate Charge for fast switching;Low Thermal DS(ON)resistan

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