BRCS080N04ZC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BRCS080N04ZC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 36.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 52 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2 nS
Cossⓘ - Capacitancia de salida: 115 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
Paquete / Cubierta: PDFN5X6
Búsqueda de reemplazo de BRCS080N04ZC MOSFET
BRCS080N04ZC Datasheet (PDF)
brcs080n04zc.pdf
BRCS080N04ZC Rev.A Jun.-2022 DATA SHEET / Descriptions PDFN 56 N N-Channel MOSFET in a PDFN 56 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;
brcs080n04zb.pdf
BRCS080N04ZB Rev.A May.-2022 DATA SHEET / Descriptions DFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN33A-8L Plastic Package. / Features VDS (V) = 40V ID = 40A (VGS = 20V) HF Product. / Applications DC/DC
brcs080n04sc.pdf
BRCS080N04SC Rev.A Jun.-2022 DATA SHEET / Descriptions SOP-8 N N-Channel Enhancement Mode Field Effect Transistor in a SOP-8 Plastic Package. / Features VDS = 40V ID =15A (VGS = 20V) RDS(ON)@10V8mR(Typ.6.4mR) HF Product. / Applications
brcs080n04sdp.pdf
BRCS080N04SDP Rev.A Sep.-2022 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features V (V) = 40V DSI =54A (V = 20V) D GS RDS(ON)@10V8mR(Typ.7.5mR) HF Product. / Applications DC/DC These devices are well suite
Otros transistores... BRCS080N02ZB , BRCS080N02ZJ , BRCS080N03DSC , BRCS080N03YB , BRCS080N04SC , BRCS080N04SDP , BRCS080N04YB , BRCS080N04ZB , AO3407 , BRCS080N10SHBD , BRCS080N10SHDP , BRCS080N10SHRA , BRCS080N10SHZC , BRCS100N03BD , BRCS100N06BD , BRCS100N06DP , BRCS100N06RA .
History: BRCS065N08SHZC
History: BRCS065N08SHZC
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