All MOSFET. BRCS080N04ZC Datasheet

 

BRCS080N04ZC Datasheet and Replacement


   Type Designator: BRCS080N04ZC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 52 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 21 nC
   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: PDFN5X6
 

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BRCS080N04ZC Datasheet (PDF)

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 brcs080n04zc.pdf pdf_icon

BRCS080N04ZC

BRCS080N04ZC Rev.A Jun.-2022 DATA SHEET / Descriptions PDFN 56 N N-Channel MOSFET in a PDFN 56 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;

 3.1. Size:1194K  blue-rocket-elect
 brcs080n04zb.pdf pdf_icon

BRCS080N04ZC

BRCS080N04ZB Rev.A May.-2022 DATA SHEET / Descriptions DFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN33A-8L Plastic Package. / Features VDS (V) = 40V ID = 40A (VGS = 20V) HF Product. / Applications DC/DC

 4.1. Size:1268K  blue-rocket-elect
 brcs080n04sc.pdf pdf_icon

BRCS080N04ZC

BRCS080N04SC Rev.A Jun.-2022 DATA SHEET / Descriptions SOP-8 N N-Channel Enhancement Mode Field Effect Transistor in a SOP-8 Plastic Package. / Features VDS = 40V ID =15A (VGS = 20V) RDS(ON)@10V8mR(Typ.6.4mR) HF Product. / Applications

 4.2. Size:1705K  blue-rocket-elect
 brcs080n04sdp.pdf pdf_icon

BRCS080N04ZC

BRCS080N04SDP Rev.A Sep.-2022 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features V (V) = 40V DSI =54A (V = 20V) D GS RDS(ON)@10V8mR(Typ.7.5mR) HF Product. / Applications DC/DC These devices are well suite

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