FQPF3N25 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQPF3N25
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 27 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 4 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm
   Paquete / Cubierta: TO220F

Búsqueda de reemplazo de MOSFET FQPF3N25

FQPF3N25 Datasheet (PDF)

..1. Size:724K fairchild semi
fqpf3n25.pdf

November 2013FQPF3N25N-Channel QFET MOSFET250 V, 2.3 A, 2.2 DescriptionFeaturesThese N-Channel enhancement mode power field effect 2.3 A, 250 V, RDS(on) = 2.2 (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, ID = 1.15 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 4.0 nC)technology has been especially tailored

..2. Size:892K onsemi
fqpf3n25.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

8.1. Size:710K fairchild semi
fqpf3n40.pdf

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.6A, 400V, RDS(on) = 3.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.2 pF)This advanced technology has bee

8.2. Size:810K fairchild semi
fqp3n80c fqpf3n80c.pdf

TMQFETFQP3N80C/FQPF3N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 4.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been especially tailored t

8.3. Size:677K fairchild semi
fqpf3n90.pdf

September 2000TMQFETQFETQFETQFETFQPF3N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.1A, 900V, RDS(on) = 4.25 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 8.0 pF)This advanced technology has

8.4. Size:638K fairchild semi
fqpf3n80.pdf

September 2000TMQFETFQPF3N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.8A, 800V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 7.0 pF)This advanced technology has been especially tail

8.5. Size:717K fairchild semi
fqpf3n30.pdf

April 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.95A, 300V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.5 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has bee

8.6. Size:1269K fairchild semi
fqp3n50c fqpf3n50c.pdf

QFETFQP3N50C/FQPF3N50C 500V N-Channel MOSFETFeatures Description 3 A, 500 V, RDS(on) = 2.5 @ VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 10 nC )DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology has been especially tailored to

8.7. Size:808K fairchild semi
fqpf3n80cydtu.pdf

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fqpf3n60.pdf

April 2000TMQFETQFETQFETQFETFQPF3N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been e

8.9. Size:1267K fairchild semi
fqp3n50c fqpf3n50c.pdf