All MOSFET. FQPF3N25 Datasheet

 

FQPF3N25 Datasheet and Replacement


   Type Designator: FQPF3N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO220F
 

 FQPF3N25 substitution

   - MOSFET ⓘ Cross-Reference Search

 

FQPF3N25 Datasheet (PDF)

 ..1. Size:724K  fairchild semi
 fqpf3n25.pdf pdf_icon

FQPF3N25

November 2013FQPF3N25N-Channel QFET MOSFET250 V, 2.3 A, 2.2 DescriptionFeaturesThese N-Channel enhancement mode power field effect 2.3 A, 250 V, RDS(on) = 2.2 (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, ID = 1.15 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 4.0 nC)technology has been especially tailored

 ..2. Size:892K  onsemi
 fqpf3n25.pdf pdf_icon

FQPF3N25

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:710K  fairchild semi
 fqpf3n40.pdf pdf_icon

FQPF3N25

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.6A, 400V, RDS(on) = 3.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.2 pF)This advanced technology has bee

 8.2. Size:810K  fairchild semi
 fqp3n80c fqpf3n80c.pdf pdf_icon

FQPF3N25

TMQFETFQP3N80C/FQPF3N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 4.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been especially tailored t

SHOW MORE

Datasheet: FQP6N70 , FQD1N60C , FQP50N06 , FQD1N80 , FQA28N50 , FQD20N06 , FQD2N100 , FQD2N60C , RU6888R , FQD2N80 , FQP4N20L , FQD2N90 , FQD2P40 , FQD30N06 , FQD3N60CTMWS , FQB9P25 , FQD3P50 .

History: IRFS9131 | 2SK3911 | SVS80R280SE3TR | 2SK1669 | IXTA52P10P | IXFH13N100 | LND150N8

Keywords - FQPF3N25 MOSFET datasheet

 FQPF3N25 cross reference
 FQPF3N25 equivalent finder
 FQPF3N25 lookup
 FQPF3N25 substitution
 FQPF3N25 replacement

 

 
Back to Top

 


 
.