RU40180R Todos los transistores

 

RU40180R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RU40180R

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 375 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 180 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 76 nS

Cossⓘ - Capacitancia de salida: 590 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm

Encapsulados: TO220

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RU40180R datasheet

 ..1. Size:368K  ruichips
ru40180r.pdf pdf_icon

RU40180R

RU40180R N-Channel Advanced Power MOSFET Features Pin Description 40V/180A, RDS (ON) =1.8m (Typ.)@VGS=10V Uses Ruichips Proprietary New TrenchTM Technology Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated F t S it hi d F ll A l h R t d 100% avalanche tested Lead Free and Green Devices Available (RoHS Complian

 9.1. Size:296K  ruichips
ru40190q2.pdf pdf_icon

RU40180R

RU40190Q2 N-Channel Advanced Power MOSFET MOSFET Features Pin Description 40V/190A, RDS (ON) =2.5m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) TO-3P Applications DC-DC Converters and Off-line UPS Switching Applications N-Channel MOSFET Absolute Maximu

 9.2. Size:301K  ruichips
ru40120r.pdf pdf_icon

RU40180R

RU40120R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 40V/120A, RDS (ON) =3.5m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters Power Supply N-Channel MOSFET Absolute Maximum Ratings Symbol Paramete

 9.3. Size:628K  ruichips
ru40191s.pdf pdf_icon

RU40180R

RU40191S N-Channel Advanced Power MOSFET Features Pin Description 40V/190A, RDS (ON) =1.8m (Typ.)@VGS=10V D Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested G S Lead Free and Green Devices Available (RoHS Compliant) TO263 D Applications DC-DC Converters and Off-line UPS Switching Applications G S N-Channel MOSFET Abso

Otros transistores... RU30C30M , RU30C40M3 , RU30J30M3 , RU30L30M3 , RU30L40M3 , RU30L40M-C , RU30P40M3 , RU40120L , IRFZ48N , RU4030M3 , RU40C20M3 , RU40C40M , RU40L60L , RU40L60M , RU4N65P , RU6035M3 , RU6051H .

History: S68N08ZRN | ELM53402CA | GP28S50XN220FP

 

 

 


History: S68N08ZRN | ELM53402CA | GP28S50XN220FP

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