RU40180R Todos los transistores

 

RU40180R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RU40180R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 180 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 76 nS
   Cossⓘ - Capacitancia de salida: 590 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

RU40180R Datasheet (PDF)

 ..1. Size:368K  ruichips
ru40180r.pdf pdf_icon

RU40180R

RU40180RN-Channel Advanced Power MOSFETFeatures Pin Description 40V/180A, RDS (ON) =1.8m(Typ.)@VGS=10V Uses Ruichips Proprietary New TrenchTM Technology Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedF t S it hi d F ll A l h R t d 100% avalanche tested Lead Free and Green Devices Available (RoHS Complian

 9.1. Size:296K  ruichips
ru40190q2.pdf pdf_icon

RU40180R

RU40190Q2N-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/190A,RDS (ON) =2.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-3PApplications DC-DC Converters and Off-line UPS Switching ApplicationsN-Channel MOSFETAbsolute Maximu

 9.2. Size:301K  ruichips
ru40120r.pdf pdf_icon

RU40180R

RU40120RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/120A,RDS (ON) =3.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters Power SupplyN-Channel MOSFETAbsolute Maximum RatingsSymbolParamete

 9.3. Size:628K  ruichips
ru40191s.pdf pdf_icon

RU40180R

RU40191SN-Channel Advanced Power MOSFETFeatures Pin Description 40V/190A, RDS (ON) =1.8m(Typ.)@VGS=10V D Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedGS Lead Free and Green Devices Available (RoHS Compliant)TO263DApplications DC-DC Converters and Off-line UPS Switching ApplicationsGSN-Channel MOSFETAbso

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History: IRLI3803PBF | NCE80H12

 

 
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