RU40180R. Аналоги и основные параметры
Наименование производителя: RU40180R
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 375 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 180 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 76 ns
Cossⓘ - Выходная емкость: 590 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0025 Ohm
Тип корпуса: TO220
Аналог (замена) для RU40180R
- подборⓘ MOSFET транзистора по параметрам
RU40180R даташит
..1. Size:368K ruichips
ru40180r.pdf 

RU40180R N-Channel Advanced Power MOSFET Features Pin Description 40V/180A, RDS (ON) =1.8m (Typ.)@VGS=10V Uses Ruichips Proprietary New TrenchTM Technology Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated F t S it hi d F ll A l h R t d 100% avalanche tested Lead Free and Green Devices Available (RoHS Complian
9.1. Size:296K ruichips
ru40190q2.pdf 

RU40190Q2 N-Channel Advanced Power MOSFET MOSFET Features Pin Description 40V/190A, RDS (ON) =2.5m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) TO-3P Applications DC-DC Converters and Off-line UPS Switching Applications N-Channel MOSFET Absolute Maximu
9.2. Size:301K ruichips
ru40120r.pdf 

RU40120R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 40V/120A, RDS (ON) =3.5m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters Power Supply N-Channel MOSFET Absolute Maximum Ratings Symbol Paramete
9.3. Size:628K ruichips
ru40191s.pdf 

RU40191S N-Channel Advanced Power MOSFET Features Pin Description 40V/190A, RDS (ON) =1.8m (Typ.)@VGS=10V D Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested G S Lead Free and Green Devices Available (RoHS Compliant) TO263 D Applications DC-DC Converters and Off-line UPS Switching Applications G S N-Channel MOSFET Abso
9.4. Size:322K ruichips
ru40120s.pdf 

RU40120S N-Channel Advanced Power MOSFET Features Pin Description 40V/120A, D RDS (ON) =3.5m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D Applications DC-DC Converters G S N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating U
9.5. Size:296K ruichips
ru40190s.pdf 

RU40190S N-Channel Advanced Power MOSFET MOSFET Features Pin Description 40V/190A, RDS (ON) =2.5m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available TO-263 (RoHS Compliant) Applications DC-DC Converters and Off-line UPS Switching Applications N-Channel MOSFET Absolute Maximu
9.6. Size:304K ruichips
ru40130r.pdf 

RU40130R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 40V/135A, RDS (ON) =3.2m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications Switching Applications N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Un
9.7. Size:297K ruichips
ru40120m.pdf 

RU40120M N-Channel Advanced Power MOSFET Features Pin Description 40V/120A, RDS (ON) =2.7m (Typ.)@VGS=10V D D D D Super High Dense Cell Design Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G S S S PIN1 PIN1 PDFN5060 D Applications DC/DC Converters Power Supply G
9.8. Size:305K ruichips
ru40190r.pdf 

RU40190R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 40V/190A, RDS (ON) =2.5m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters and Off-line UPS Switching Applications N-Channel MOSFET Absolute Maximu
9.9. Size:292K ruichips
ru40150s.pdf 

RU40150S N-Channel Advanced Power MOSFET MOSFET Features Pin Description 40V/150A, RDS (ON) =3m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available TO-263 (RoHS Compliant) Applications DC-DC Converters and Off-line UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter R
9.10. Size:322K ruichips
ru40120l.pdf 

RU40120L N-Channel Advanced Power MOSFET Features Pin Description 40V/120A, D RDS (ON) =2.8m (Typ.)@VGS=10V Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G S TO252 D Applications
9.11. Size:301K ruichips
ru40150r.pdf 

RU40150R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 40V/150A, RDS (ON) =3m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters and Off-line UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter R
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