RUH1H139R-A Todos los transistores

 

RUH1H139R-A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RUH1H139R-A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 187 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 138 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 590 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm

Encapsulados: TO220

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RUH1H139R-A datasheet

 ..1. Size:374K  ruichips
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RUH1H139R-A

RUH1H139R-A N-Channel Advanced Power MOSFET Features Pin Description 100V/138A, RDS (ON) =4.6m (Typ.)@VGS=10V Uses Ruichips advanced SGT Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 100% Avalanche Tested 175 C Operating Temperature Lead Free and Green Devices (RoHS Compliant) G D S TO220 D D D D D

 5.1. Size:378K  ruichips
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RUH1H139R-A

RUH1H139R N-Channel Advanced Power MOSFET Features Pin Description 100V/138A, RDS (ON) =4.6m (Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 100% A l h T t d 175 C Operating Temperature Lead Free and Green Devices (RoHS Compliant) G D S TO220 D D D D D D App

 6.1. Size:310K  ruichips
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RUH1H139R-A

RUH1H139S N-Channel Advanced Power MOSFET Features Pin Description 100V/138A, D RDS (ON) =4.6m (Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 100% A l h T t d 175 C Operating Temperature Lead Free and Green Devices (RoHS Compliant) G S TO263 D D D D D D Appl

 7.1. Size:312K  ruichips
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RUH1H139R-A

RUH1H138S N-Channel Advanced Power MOSFET Features Pin Description 100V/138A, D RDS (ON) =4.2m (Typ.)@VGS=10V RDS (ON) =4.6m (Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product E ll t Q R P d t 100% avalanche tested 175 C Operating Temperature G Lead Free and Green Devices Available (RoHS

Otros transistores... RUH120N70R , RUH120N81L , RUH120N90M , RUH120N90R , RUH1H130S , RUH1H138M-C , RUH1H138S , RUH1H139R , IRF640 , RUH1H139S , RUH1H150M-C , RUH1H150R-A , RUH1H150S , RUH1H150S-AR , RUH1H150T , RUH1H220R , RUH1H220S .

 

 

 

 

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