All MOSFET. RUH1H139R-A Datasheet

 

RUH1H139R-A MOSFET. Datasheet pdf. Equivalent


   Type Designator: RUH1H139R-A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 187 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 138 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 69 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 590 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO220

 RUH1H139R-A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RUH1H139R-A Datasheet (PDF)

 ..1. Size:374K  ruichips
 ruh1h139r-a.pdf

RUH1H139R-A RUH1H139R-A

RUH1H139R-AN-Channel Advanced Power MOSFETFeatures Pin Description 100V/138A, RDS (ON) =4.6m(Typ.)@VGS=10V Uses Ruichips advanced SGT Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 100% Avalanche Tested 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)GDSTO220DDDDD

 5.1. Size:378K  ruichips
 ruh1h139r.pdf

RUH1H139R-A RUH1H139R-A

RUH1H139RN-Channel Advanced Power MOSFETFeatures Pin Description 100V/138A, RDS (ON) =4.6m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)GDSTO220DDDDDDApp

 6.1. Size:310K  ruichips
 ruh1h139s.pdf

RUH1H139R-A RUH1H139R-A

RUH1H139SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/138A,DRDS (ON) =4.6m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)GSTO263DDDDDDAppl

 7.1. Size:312K  ruichips
 ruh1h138s.pdf

RUH1H139R-A RUH1H139R-A

RUH1H138SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/138A,DRDS (ON) =4.2m(Typ.)@VGS=10VRDS (ON) =4.6m(Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) ProductE ll t Q R P d t 100% avalanche tested 175C Operating TemperatureG Lead Free and Green Devices Available (RoHS

 7.2. Size:312K  ruichips
 ruh1h130s.pdf

RUH1H139R-A RUH1H139R-A

RUH1H130SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/130A,DRDS (ON) =5.8m(Typ.)@VGS=10VRDS (ON) =6.5m(Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) ProductE ll t Q R P d t 100% avalanche tested 175C Operating TemperatureG Lead Free and Green Devices Available (RoHS

 7.3. Size:218K  ruichips
 ruh1h138m-c.pdf

RUH1H139R-A RUH1H139R-A

RUH1H138M-CN-Channel Advanced Power MOSFETFeatures Pin Description 100V/130A,RDS (ON) =3.6m(Typ.)@VGS=10VDRDS (ON) =4.5m(Typ.)@VGS=4.5VDD Uses Ruichips advanced RUISGTTM technology D Ultra Low On-Resistance Fast Switching SpeedG 100% Avalanche TestedSS Lead Free and Green Devices (RoHS Compliant)SPIN1DFN5060DApplications Syn

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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