RUH1H139S Todos los transistores

 

RUH1H139S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RUH1H139S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 294 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 138 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 29 nS
   Cossⓘ - Capacitancia de salida: 720 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: TO263
     - Selección de transistores por parámetros

 

RUH1H139S Datasheet (PDF)

 ..1. Size:310K  ruichips
 ruh1h139s.pdf pdf_icon

RUH1H139S

RUH1H139SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/138A,DRDS (ON) =4.6m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)GSTO263DDDDDDAppl

 6.1. Size:378K  ruichips
 ruh1h139r.pdf pdf_icon

RUH1H139S

RUH1H139RN-Channel Advanced Power MOSFETFeatures Pin Description 100V/138A, RDS (ON) =4.6m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)GDSTO220DDDDDDApp

 6.2. Size:374K  ruichips
 ruh1h139r-a.pdf pdf_icon

RUH1H139S

RUH1H139R-AN-Channel Advanced Power MOSFETFeatures Pin Description 100V/138A, RDS (ON) =4.6m(Typ.)@VGS=10V Uses Ruichips advanced SGT Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 100% Avalanche Tested 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)GDSTO220DDDDD

 7.1. Size:312K  ruichips
 ruh1h138s.pdf pdf_icon

RUH1H139S

RUH1H138SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/138A,DRDS (ON) =4.2m(Typ.)@VGS=10VRDS (ON) =4.6m(Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) ProductE ll t Q R P d t 100% avalanche tested 175C Operating TemperatureG Lead Free and Green Devices Available (RoHS

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SSM6N43FU | DMN2170U | SML5085AN | SWT38N60K | STH8NA60 | FNK10N25B | HYG800P10LR1U

 

 
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