RUH1H150M-C Todos los transistores

 

RUH1H150M-C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RUH1H150M-C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 232 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 150 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 31 nS
   Cossⓘ - Capacitancia de salida: 1830 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
   Paquete / Cubierta: DFN5060
 

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RUH1H150M-C Datasheet (PDF)

 ..1. Size:282K  ruichips
 ruh1h150m-c.pdf pdf_icon

RUH1H150M-C

RUH1H150M-CN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A,RDS (ON) =2.8m(Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-ResistanceG Excellent Qg&RDS(on) PerformanceSS Low Gate Charge Minimizing Switching LossS 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant)DDDDPIN1DFN5060D

 6.1. Size:396K  ruichips
 ruh1h150r-a.pdf pdf_icon

RUH1H150M-C

RUH1H150R-AN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A, RDS (ON) =3.4m(Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching LossL G t Ch Mi i i i S it hi L 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant)GD

 6.2. Size:311K  ruichips
 ruh1h150s.pdf pdf_icon

RUH1H150M-C

RUH1H150SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A,D RDS (ON) =3.2m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested100% l h t t d 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GSTO263DDDDD

 6.3. Size:265K  ruichips
 ruh1h150t.pdf pdf_icon

RUH1H150M-C

RUH1H150TN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A,11RDS (ON) =2.9m(Typ.)@VGS=10V910 Using Ruichips Advanced RUISGTTM Technology109 Ultra Low On-Resistance Excellent Qg&RDS(on) Performance1111 Low Gate Charge Minimizing Switching LossL G t Ch Mi i i i S it hi L2 834 76 100% Avalanche Tested56 54 Lead Fre

MOSTRAR MÁS

Otros transistores... RUH120N90M , RUH120N90R , RUH1H130S , RUH1H138M-C , RUH1H138S , RUH1H139R , RUH1H139R-A , RUH1H139S , IRFP260N , RUH1H150R-A , RUH1H150S , RUH1H150S-AR , RUH1H150T , RUH1H220R , RUH1H220S , RUH1H300T , RUH3025M3 .

History: WFJ5N65B | DMT10N60 | SI2301BDS-T1-GE3 | SMF2N60 | AP10N10K | SWI1N60 | HYG082N03LR1C1

 

 
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