RUH1H150M-C - аналоги, параметры транзистора - Справочник транзисторов

RUH1H150M-C даташит

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RUH1H150M-C N-Channel Advanced Power MOSFET Features Pin Description 100V/150A, RDS (ON) =2.8m (Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance G Excellent Qg&RDS(on) Performance S S Low Gate Charge Minimizing Switching Loss S 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant) DD DD PIN1 DFN5060 D

6.1. Size:396K ruichips
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RUH1H150R-A N-Channel Advanced Power MOSFET Features Pin Description 100V/150A, RDS (ON) =3.4m (Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching Loss L G t Ch Mi i i i S it hi L 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant) G D

6.2. Size:311K ruichips
ruh1h150s.pdf pdf_icon

RUH1H150S N-Channel Advanced Power MOSFET Features Pin Description 100V/150A, D RDS (ON) =3.2m (Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested 100% l h t t d 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D D D D D

6.3. Size:265K ruichips
ruh1h150t.pdf pdf_icon

RUH1H150T N-Channel Advanced Power MOSFET Features Pin Description 100V/150A, 11 RDS (ON) =2.9m (Typ.)@VGS=10V 9 10 Using Ruichips Advanced RUISGTTM Technology 10 9 Ultra Low On-Resistance Excellent Qg&RDS(on) Performance 11 1 1 Low Gate Charge Minimizing Switching Loss L G t Ch Mi i i i S it hi L 2 8 34 76 100% Avalanche Tested 56 54 Lead Fre