RUH1H150S Todos los transistores

 

RUH1H150S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RUH1H150S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 416 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 150 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 39 nS

Cossⓘ - Capacitancia de salida: 995 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO263

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RUH1H150S datasheet

 ..1. Size:311K  ruichips
 ruh1h150s.pdf pdf_icon

RUH1H150S

RUH1H150S N-Channel Advanced Power MOSFET Features Pin Description 100V/150A, D RDS (ON) =3.2m (Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested 100% l h t t d 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D D D D D

 0.1. Size:387K  ruichips
 ruh1h150s-ar.pdf pdf_icon

RUH1H150S

RUH1H150S-AR N-Channel Advanced Power MOSFET Features Pin Description 100V/150A, D RDS (ON) =3.2m (Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested 100% l h t t d 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D D D D

 6.1. Size:396K  ruichips
 ruh1h150r-a.pdf pdf_icon

RUH1H150S

RUH1H150R-A N-Channel Advanced Power MOSFET Features Pin Description 100V/150A, RDS (ON) =3.4m (Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching Loss L G t Ch Mi i i i S it hi L 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant) G D

 6.2. Size:265K  ruichips
 ruh1h150t.pdf pdf_icon

RUH1H150S

RUH1H150T N-Channel Advanced Power MOSFET Features Pin Description 100V/150A, 11 RDS (ON) =2.9m (Typ.)@VGS=10V 9 10 Using Ruichips Advanced RUISGTTM Technology 10 9 Ultra Low On-Resistance Excellent Qg&RDS(on) Performance 11 1 1 Low Gate Charge Minimizing Switching Loss L G t Ch Mi i i i S it hi L 2 8 34 76 100% Avalanche Tested 56 54 Lead Fre

MOSTRAR MÁS

Otros transistores... RUH1H130S , RUH1H138M-C , RUH1H138S , RUH1H139R , RUH1H139R-A , RUH1H139S , RUH1H150M-C , RUH1H150R-A , IRF640N , RUH1H150S-AR , RUH1H150T , RUH1H220R , RUH1H220S , RUH1H300T , RUH3025M3 , RUH3030M3 , RUH3051M .

History: BRI50N03

 

 

 

 

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