All MOSFET. RUH1H150S Datasheet

 

RUH1H150S MOSFET. Datasheet pdf. Equivalent


   Type Designator: RUH1H150S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 416 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 150 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 90 nC
   trⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 995 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO263

 RUH1H150S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RUH1H150S Datasheet (PDF)

 ..1. Size:311K  ruichips
 ruh1h150s.pdf

RUH1H150S RUH1H150S

RUH1H150SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A,D RDS (ON) =3.2m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested100% l h t t d 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GSTO263DDDDD

 0.1. Size:387K  ruichips
 ruh1h150s-ar.pdf

RUH1H150S RUH1H150S

RUH1H150S-ARN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A,DRDS (ON) =3.2m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested100% l h t t d 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GSTO263DDDD

 6.1. Size:396K  ruichips
 ruh1h150r-a.pdf

RUH1H150S RUH1H150S

RUH1H150R-AN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A, RDS (ON) =3.4m(Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching LossL G t Ch Mi i i i S it hi L 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant)GD

 6.2. Size:265K  ruichips
 ruh1h150t.pdf

RUH1H150S RUH1H150S

RUH1H150TN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A,11RDS (ON) =2.9m(Typ.)@VGS=10V910 Using Ruichips Advanced RUISGTTM Technology109 Ultra Low On-Resistance Excellent Qg&RDS(on) Performance1111 Low Gate Charge Minimizing Switching LossL G t Ch Mi i i i S it hi L2 834 76 100% Avalanche Tested56 54 Lead Fre

 6.3. Size:282K  ruichips
 ruh1h150m-c.pdf

RUH1H150S RUH1H150S

RUH1H150M-CN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A,RDS (ON) =2.8m(Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-ResistanceG Excellent Qg&RDS(on) PerformanceSS Low Gate Charge Minimizing Switching LossS 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant)DDDDPIN1DFN5060D

 6.4. Size:1197K  ruichips
 ruh1h150r.pdf

RUH1H150S RUH1H150S

RUH1H150RN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A,RDS (ON) =3.2m(Typ.)@VGS=10V Advanced HEFET Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DApplications Motor Drives Uninte

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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