All MOSFET. RUH1H150S Datasheet

 

RUH1H150S Datasheet and Replacement


   Type Designator: RUH1H150S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 416 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 995 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO263
 

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RUH1H150S Datasheet (PDF)

 ..1. Size:311K  ruichips
 ruh1h150s.pdf pdf_icon

RUH1H150S

RUH1H150SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A,D RDS (ON) =3.2m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested100% l h t t d 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GSTO263DDDDD

 0.1. Size:387K  ruichips
 ruh1h150s-ar.pdf pdf_icon

RUH1H150S

RUH1H150S-ARN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A,DRDS (ON) =3.2m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested100% l h t t d 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GSTO263DDDD

 6.1. Size:396K  ruichips
 ruh1h150r-a.pdf pdf_icon

RUH1H150S

RUH1H150R-AN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A, RDS (ON) =3.4m(Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching LossL G t Ch Mi i i i S it hi L 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant)GD

 6.2. Size:265K  ruichips
 ruh1h150t.pdf pdf_icon

RUH1H150S

RUH1H150TN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A,11RDS (ON) =2.9m(Typ.)@VGS=10V910 Using Ruichips Advanced RUISGTTM Technology109 Ultra Low On-Resistance Excellent Qg&RDS(on) Performance1111 Low Gate Charge Minimizing Switching LossL G t Ch Mi i i i S it hi L2 834 76 100% Avalanche Tested56 54 Lead Fre

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Datasheet: RUH1H130S , RUH1H138M-C , RUH1H138S , RUH1H139R , RUH1H139R-A , RUH1H139S , RUH1H150M-C , RUH1H150R-A , IRF630 , RUH1H150S-AR , RUH1H150T , RUH1H220R , RUH1H220S , RUH1H300T , RUH3025M3 , RUH3030M3 , RUH3051M .

History: HM3205B

Keywords - RUH1H150S MOSFET datasheet

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