RUH1H220S Todos los transistores

 ..1. Size:333K  ruichips
 ruh1h220s.pdf

RUH1H220S N-Channel Advanced Power MOSFET Features Pin Description 100V/220A, D RDS (ON) =2.4m (Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching Loss L G t Ch Mi i i i S it hi L 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant) G S

 6.1. Size:391K  ruichips
 ruh1h220r.pdf

RUH1H220R N-Channel Advanced Power MOSFET Features Pin Description 100V/220A, RDS (ON) =2.5m (Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching Loss L G t Ch Mi i i i S it hi L 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant) G D S

 9.1. Size:312K  ruichips
 ruh1h138s.pdf

RUH1H138S N-Channel Advanced Power MOSFET Features Pin Description 100V/138A, D RDS (ON) =4.2m (Typ.)@VGS=10V RDS (ON) =4.6m (Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product E ll t Q R P d t 100% avalanche tested 175 C Operating Temperature G Lead Free and Green Devices Available (RoHS

 9.2. Size:396K  ruichips
 ruh1h150r-a.pdf

RUH1H150R-A N-Channel Advanced Power MOSFET Features Pin Description 100V/150A, RDS (ON) =3.4m (Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching Loss L G t Ch Mi i i i S it hi L 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant) G D

 9.3. Size:312K  ruichips
 ruh1h130s.pdf

RUH1H130S N-Channel Advanced Power MOSFET Features Pin Description 100V/130A, D RDS (ON) =5.8m (Typ.)@VGS=10V RDS (ON) =6.5m (Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product E ll t Q R P d t 100% avalanche tested 175 C Operating Temperature G Lead Free and Green Devices Available (RoHS

 9.4. Size:311K  ruichips
 ruh1h150s.pdf

RUH1H150S N-Channel Advanced Power MOSFET Features Pin Description 100V/150A, D RDS (ON) =3.2m (Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested 100% l h t t d 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D D D D D

 9.5. Size:378K  ruichips
 ruh1h139r.pdf

RUH1H139R N-Channel Advanced Power MOSFET Features Pin Description 100V/138A, RDS (ON) =4.6m (Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 100% A l h T t d 175 C Operating Temperature Lead Free and Green Devices (RoHS Compliant) G D S TO220 D D D D D D App

 9.6. Size:264K  ruichips
 ruh1h300t.pdf

RUH1H300T N-Channel Advanced Power MOSFET Features Pin Description 100V/300A, 11 RDS (ON) =1.6m (Typ.)@VGS=10V 9 10 Using Ruichips Advanced RUISGTTM Technology 10 9 Ultra Low On-Resistance Excellent Qg&RDS(on) Performance 11 1 1 Low Gate Charge Minimizing Switching Loss L G t Ch Mi i i i S it hi L 2 8 34 76 100% Avalanche Tested 56 54 Lead Fre

 9.7. Size:374K  ruichips
 ruh1h139r-a.pdf

RUH1H139R-A N-Channel Advanced Power MOSFET Features Pin Description 100V/138A, RDS (ON) =4.6m (Typ.)@VGS=10V Uses Ruichips advanced SGT Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 100% Avalanche Tested 175 C Operating Temperature Lead Free and Green Devices (RoHS Compliant) G D S TO220 D D D D D

 9.8. Size:265K  ruichips
 ruh1h150t.pdf

RUH1H150T N-Channel Advanced Power MOSFET Features Pin Description 100V/150A, 11 RDS (ON) =2.9m (Typ.)@VGS=10V 9 10 Using Ruichips Advanced RUISGTTM Technology 10 9 Ultra Low On-Resistance Excellent Qg&RDS(on) Performance 11 1 1 Low Gate Charge Minimizing Switching Loss L G t Ch Mi i i i S it hi L 2 8 34 76 100% Avalanche Tested 56 54 Lead Fre

 9.9. Size:282K  ruichips
 ruh1h150m-c.pdf

RUH1H150M-C N-Channel Advanced Power MOSFET Features Pin Description 100V/150A, RDS (ON) =2.8m (Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance G Excellent Qg&RDS(on) Performance S S Low Gate Charge Minimizing Switching Loss S 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant) DD DD PIN1 DFN5060 D

 9.10. Size:310K  ruichips
 ruh1h139s.pdf

RUH1H139S N-Channel Advanced Power MOSFET Features Pin Description 100V/138A, D RDS (ON) =4.6m (Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 100% A l h T t d 175 C Operating Temperature Lead Free and Green Devices (RoHS Compliant) G S TO263 D D D D D D Appl

 9.11. Size:1197K  ruichips
 ruh1h150r.pdf

RUH1H150R N-Channel Advanced Power MOSFET Features Pin Description 100V/150A, RDS (ON) =3.2m (Typ.)@VGS=10V Advanced HEFET Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G D S TO220 D Applications Motor Drives Uninte

 9.12. Size:218K  ruichips
 ruh1h138m-c.pdf

RUH1H138M-C N-Channel Advanced Power MOSFET Features Pin Description 100V/130A, RDS (ON) =3.6m (Typ.)@VGS=10V D RDS (ON) =4.5m (Typ.)@VGS=4.5V D D Uses Ruichips advanced RUISGTTM technology D Ultra Low On-Resistance Fast Switching Speed G 100% Avalanche Tested S S Lead Free and Green Devices (RoHS Compliant) S PIN1 DFN5060 D Applications Syn

 9.13. Size:387K  ruichips
 ruh1h150s-ar.pdf

RUH1H150S-AR N-Channel Advanced Power MOSFET Features Pin Description 100V/150A, D RDS (ON) =3.2m (Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested 100% l h t t d 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D D D D