RUH1H220S PDF and Equivalents Search

 

RUH1H220S Specs and Replacement

Type Designator: RUH1H220S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 517 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 220 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 51 nS

Cossⓘ - Output Capacitance: 1550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: TO263

RUH1H220S substitution

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RUH1H220S datasheet

 ..1. Size:333K  ruichips
 ruh1h220s.pdf pdf_icon

RUH1H220S

RUH1H220S N-Channel Advanced Power MOSFET Features Pin Description 100V/220A, D RDS (ON) =2.4m (Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching Loss L G t Ch Mi i i i S it hi L 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant) G S ... See More ⇒

 6.1. Size:391K  ruichips
 ruh1h220r.pdf pdf_icon

RUH1H220S

RUH1H220R N-Channel Advanced Power MOSFET Features Pin Description 100V/220A, RDS (ON) =2.5m (Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching Loss L G t Ch Mi i i i S it hi L 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant) G D S ... See More ⇒

 9.1. Size:312K  ruichips
 ruh1h138s.pdf pdf_icon

RUH1H220S

RUH1H138S N-Channel Advanced Power MOSFET Features Pin Description 100V/138A, D RDS (ON) =4.2m (Typ.)@VGS=10V RDS (ON) =4.6m (Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product E ll t Q R P d t 100% avalanche tested 175 C Operating Temperature G Lead Free and Green Devices Available (RoHS ... See More ⇒

 9.2. Size:396K  ruichips
 ruh1h150r-a.pdf pdf_icon

RUH1H220S

RUH1H150R-A N-Channel Advanced Power MOSFET Features Pin Description 100V/150A, RDS (ON) =3.4m (Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching Loss L G t Ch Mi i i i S it hi L 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant) G D ... See More ⇒

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Detailed specifications: RUH1H139R-A, RUH1H139S, RUH1H150M-C, RUH1H150R-A, RUH1H150S, RUH1H150S-AR, RUH1H150T, RUH1H220R, IRF3710, RUH1H300T, RUH3025M3, RUH3030M3, RUH3051M, RUH3090M, RUH3090M3-C, RUH30J105M, RUH30J120M

Keywords - RUH1H220S MOSFET specs

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