RUH1H300T Todos los transistores

 

RUH1H300T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RUH1H300T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 428 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 300 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 6450 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0019 Ohm

Encapsulados: TOLL

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RUH1H300T datasheet

 ..1. Size:264K  ruichips
 ruh1h300t.pdf pdf_icon

RUH1H300T

RUH1H300T N-Channel Advanced Power MOSFET Features Pin Description 100V/300A, 11 RDS (ON) =1.6m (Typ.)@VGS=10V 9 10 Using Ruichips Advanced RUISGTTM Technology 10 9 Ultra Low On-Resistance Excellent Qg&RDS(on) Performance 11 1 1 Low Gate Charge Minimizing Switching Loss L G t Ch Mi i i i S it hi L 2 8 34 76 100% Avalanche Tested 56 54 Lead Fre

 9.1. Size:312K  ruichips
 ruh1h138s.pdf pdf_icon

RUH1H300T

RUH1H138S N-Channel Advanced Power MOSFET Features Pin Description 100V/138A, D RDS (ON) =4.2m (Typ.)@VGS=10V RDS (ON) =4.6m (Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product E ll t Q R P d t 100% avalanche tested 175 C Operating Temperature G Lead Free and Green Devices Available (RoHS

 9.2. Size:396K  ruichips
 ruh1h150r-a.pdf pdf_icon

RUH1H300T

RUH1H150R-A N-Channel Advanced Power MOSFET Features Pin Description 100V/150A, RDS (ON) =3.4m (Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching Loss L G t Ch Mi i i i S it hi L 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant) G D

 9.3. Size:312K  ruichips
 ruh1h130s.pdf pdf_icon

RUH1H300T

RUH1H130S N-Channel Advanced Power MOSFET Features Pin Description 100V/130A, D RDS (ON) =5.8m (Typ.)@VGS=10V RDS (ON) =6.5m (Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product E ll t Q R P d t 100% avalanche tested 175 C Operating Temperature G Lead Free and Green Devices Available (RoHS

MOSTRAR MÁS

Otros transistores... RUH1H139S , RUH1H150M-C , RUH1H150R-A , RUH1H150S , RUH1H150S-AR , RUH1H150T , RUH1H220R , RUH1H220S , 10N60 , RUH3025M3 , RUH3030M3 , RUH3051M , RUH3090M , RUH3090M3-C , RUH30J105M , RUH30J120M , RUH30J51M .

 

 

 

 

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