RUH1H300T - описание и поиск аналогов

RUH1H300T N-Channel Advanced Power MOSFET Features Pin Description 100V/300A, 11 RDS (ON) =1.6m (Typ.)@VGS=10V 9 10 Using Ruichips Advanced RUISGTTM Technology 10 9 Ultra Low On-Resistance Excellent Qg&RDS(on) Performance 11 1 1 Low Gate Charge Minimizing Switching Loss L G t Ch Mi i i i S it hi L 2 8 34 76 100% Avalanche Tested 56 54 Lead Fre

RUH1H138S N-Channel Advanced Power MOSFET Features Pin Description 100V/138A, D RDS (ON) =4.2m (Typ.)@VGS=10V RDS (ON) =4.6m (Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product E ll t Q R P d t 100% avalanche tested 175 C Operating Temperature G Lead Free and Green Devices Available (RoHS

RUH1H150R-A N-Channel Advanced Power MOSFET Features Pin Description 100V/150A, RDS (ON) =3.4m (Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching Loss L G t Ch Mi i i i S it hi L 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant) G D

RUH1H130S N-Channel Advanced Power MOSFET Features Pin Description 100V/130A, D RDS (ON) =5.8m (Typ.)@VGS=10V RDS (ON) =6.5m (Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product E ll t Q R P d t 100% avalanche tested 175 C Operating Temperature G Lead Free and Green Devices Available (RoHS

RUH1H150S N-Channel Advanced Power MOSFET Features Pin Description 100V/150A, D RDS (ON) =3.2m (Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested 100% l h t t d 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D D D D D

RUH1H139R N-Channel Advanced Power MOSFET Features Pin Description 100V/138A, RDS (ON) =4.6m (Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 100% A l h T t d 175 C Operating Temperature Lead Free and Green Devices (RoHS Compliant) G D S TO220 D D D D D D App

RUH1H139R-A N-Channel Advanced Power MOSFET Features Pin Description 100V/138A, RDS (ON) =4.6m (Typ.)@VGS=10V Uses Ruichips advanced SGT Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 100% Avalanche Tested 175 C Operating Temperature Lead Free and Green Devices (RoHS Compliant) G D S TO220 D D D D D

RUH1H150T N-Channel Advanced Power MOSFET Features Pin Description 100V/150A, 11 RDS (ON) =2.9m (Typ.)@VGS=10V 9 10 Using Ruichips Advanced RUISGTTM Technology 10 9 Ultra Low On-Resistance Excellent Qg&RDS(on) Performance 11 1 1 Low Gate Charge Minimizing Switching Loss L G t Ch Mi i i i S it hi L 2 8 34 76 100% Avalanche Tested 56 54 Lead Fre

RUH1H150M-C N-Channel Advanced Power MOSFET Features Pin Description 100V/150A, RDS (ON) =2.8m (Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance G Excellent Qg&RDS(on) Performance S S Low Gate Charge Minimizing Switching Loss S 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant) DD DD PIN1 DFN5060 D

RUH1H139S N-Channel Advanced Power MOSFET Features Pin Description 100V/138A, D RDS (ON) =4.6m (Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 100% A l h T t d 175 C Operating Temperature Lead Free and Green Devices (RoHS Compliant) G S TO263 D D D D D D Appl

RUH1H150R N-Channel Advanced Power MOSFET Features Pin Description 100V/150A, RDS (ON) =3.2m (Typ.)@VGS=10V Advanced HEFET Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G D S TO220 D Applications Motor Drives Uninte

RUH1H138M-C N-Channel Advanced Power MOSFET Features Pin Description 100V/130A, RDS (ON) =3.6m (Typ.)@VGS=10V D RDS (ON) =4.5m (Typ.)@VGS=4.5V D D Uses Ruichips advanced RUISGTTM technology D Ultra Low On-Resistance Fast Switching Speed G 100% Avalanche Tested S S Lead Free and Green Devices (RoHS Compliant) S PIN1 DFN5060 D Applications Syn

RUH1H220S N-Channel Advanced Power MOSFET Features Pin Description 100V/220A, D RDS (ON) =2.4m (Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching Loss L G t Ch Mi i i i S it hi L 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant) G S

RUH1H150S-AR N-Channel Advanced Power MOSFET Features Pin Description 100V/150A, D RDS (ON) =3.2m (Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested 100% l h t t d 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D D D D

RUH1H220R N-Channel Advanced Power MOSFET Features Pin Description 100V/220A, RDS (ON) =2.5m (Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching Loss L G t Ch Mi i i i S it hi L 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant) G D S