FQD5N20L Todos los transistores

 

FQD5N20L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQD5N20L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 37 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 3.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 1.2 Ohm

Empaquetado / Estuche: TO252_DPAK

Búsqueda de reemplazo de MOSFET FQD5N20L

 

 

FQD5N20L Datasheet (PDF)

1.1. fqd5n20ltf fqd5n20ltm.pdf Size:618K _fairchild_semi

FQD5N20L
FQD5N20L

October 2008 QFET® FQD5N20L / FQU5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.8A, 200V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology is especia

1.2. fqd5n20l fqu5n20l.pdf Size:618K _fairchild_semi

FQD5N20L
FQD5N20L

October 2008 QFET FQD5N20L / FQU5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology is especially tailored t

 3.1. fqd5n20 fqu5n20.pdf Size:695K _fairchild_semi

FQD5N20L
FQD5N20L

April 2000 TM QFET QFET QFET QFET FQD5N20 / FQU5N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been esp

3.2. fqd5n20tf.pdf Size:690K _fairchild_semi

FQD5N20L
FQD5N20L

April 2000 TM QFET QFET QFET QFET FQD5N20 / FQU5N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.8A, 200V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology

Otros transistores... FQD3N60CTM_WS , FQB9P25 , FQD3P50 , FQD3P50TM_F085 , FQD4N20 , FQP11P06 , FQD4N25 , FQD4P25 , BUK455-200A , FQP12P10 , FQD5N60C , FDS4675 , FQD5P10 , FQD5P20 , FQD6N25 , FQD6N40C , HUFA76419D_F085 .

Back to Top

 


FQD5N20L
  FQD5N20L
  FQD5N20L
  FQD5N20L
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: QS8M51 | QS8M13 | QS8M11 | QS8K21 | QS8K2 | QS8K13 | QS8K11 | QS8J5 | QS8J4 | QS8J2 | QS8J13 | QS8J12 | QS8J11 | QS8F2 | QS6U24 |

 

 

Back to Top