All MOSFET. FQD5N20L Datasheet

 

FQD5N20L MOSFET. Datasheet pdf. Equivalent

Type Designator: FQD5N20L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 37 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 3.8 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: TO252, DPAK

FQD5N20L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD5N20L Datasheet (PDF)

1.1. fqd5n20l fqu5n20l.pdf Size:618K _fairchild_semi

FQD5N20L
FQD5N20L

October 2008 QFET FQD5N20L / FQU5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology is especially tailored t

1.2. fqd5n20ltf fqd5n20ltm.pdf Size:618K _fairchild_semi

FQD5N20L
FQD5N20L

October 2008 QFET® FQD5N20L / FQU5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.8A, 200V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology is especia

 3.1. fqd5n20 fqu5n20.pdf Size:695K _fairchild_semi

FQD5N20L
FQD5N20L

April 2000 TM QFET QFET QFET QFET FQD5N20 / FQU5N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been esp

3.2. fqd5n20tf.pdf Size:690K _fairchild_semi

FQD5N20L
FQD5N20L

April 2000 TM QFET QFET QFET QFET FQD5N20 / FQU5N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.8A, 200V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology

Datasheet: FQD3N60CTM_WS , FQB9P25 , FQD3P50 , FQD3P50TM_F085 , FQD4N20 , FQP11P06 , FQD4N25 , FQD4P25 , BUK455-200A , FQP12P10 , FQD5N60C , FDS4675 , FQD5P10 , FQD5P20 , FQD6N25 , FQD6N40C , HUFA76419D_F085 .

 

 
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