FQP12P10 Todos los transistores

 

FQP12P10 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQP12P10
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11.5 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm
   Paquete / Cubierta: TO220
 

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Principales características: FQP12P10

 ..1. Size:1058K  fairchild semi
fqp12p10.pdf pdf_icon

FQP12P10

November 2013 FQP12P10 P-Channel QFET MOSFET -100 V, -11.5 A, 290 m Description Features These P-Channel enhancement mode power field effect -11.5 A, -100 V, RDS(on) = 290 m (Max.) @ VGS = -10 V, transistors are produced using Fairchild s proprietary, ID = -5.75 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 21 nC) technology has been especial

 8.1. Size:759K  fairchild semi
fqp12p20.pdf pdf_icon

FQP12P10

May 2000 TM QFET QFET QFET QFET 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has bee

 9.1. Size:469K  1
fqp12n65c fqpf12n65c.pdf pdf_icon

FQP12P10

12N65 Series N-Channel MOSFET 12A, 650V, N H FQP12N65C H12N65P P TO-220AB 12N65 HAOHAI 50Pcs 1000Pcs 5000Pcs FQPF12N65C H12N65F F TO-220FP 12N65 Series Pin Assignment Features ID=12A Originative New Des

 9.2. Size:530K  fairchild semi
fqp12n60.pdf pdf_icon

FQP12P10

April 2000 TM QFET QFET QFET QFET FQP12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10.5A, 600V, RDS(on) = 0.7 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been

Otros transistores... FQB9P25 , FQD3P50 , FQD3P50TMF085 , FQD4N20 , FQP11P06 , FQD4N25 , FQD4P25 , FQD5N20L , IRFZ48N , FQD5N60C , FDS4675 , FQD5P10 , FQD5P20 , FQD6N25 , FQD6N40C , HUFA76419DF085 , FQD6N50C .

 

 
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