FQP12P10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQP12P10
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 75 W
Tensión drenaje-fuente (Vds): 100 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 11.5 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Carga de compuerta (Qg): 27 nC
Resistencia drenaje-fuente RDS(on): 0.29 Ohm
Empaquetado / Estuche: TO220
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FQP12P10 Datasheet (PDF)
1.1. fqp12p10.pdf 
Size:1058K _fairchild_semi
November 2013 FQP12P10 P-Channel QFET® MOSFET -100 V, -11.5 A, 290 mΩ Description Features These P-Channel enhancement mode power field effect • -11.5 A, -100 V, RDS(on) = 290 mΩ (Max.) @ VGS = -10 V, transistors are produced using Fairchild’s proprietary, ID = -5.75 A planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 21 nC) technology has been especial
4.1. fqp12p20.pdf Size:759K _fairchild_semi
May 2000 TM QFET QFET QFET QFET 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially
5.1. fqp12n60c.pdf Size:1701K _fairchild_semi
March 2014 FQP12N60C N-Channel QFET® MOSFET 600 V, 12 A, 650 mΩ Description Features These N-Channel enhancement mode power field effect • 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, transistors are produced using Fairchild’s proprietary, planar ID = 6 A stripe, DMOS technology. This advanced technology has • Low Gate Charge (Typ. 48 nC) been especially tailored to
5.2. fqp12n60.pdf Size:530K _fairchild_semi
April 2000 TM QFET QFET QFET QFET FQP12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 10.5A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 42 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been
5.3. fqp12n60c fqpf12n60c.pdf Size:1170K _fairchild_semi
September 2007 QFET FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Features Description 12A, 600V, RDS(on) = 0.65? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 21pF) This advanced technology has been especially tailored to
Otros transistores... FQB9P25 , FQD3P50 , FQD3P50TM_F085 , FQD4N20 , FQP11P06 , FQD4N25 , FQD4P25 , FQD5N20L , 2SK163 , FQD5N60C , FDS4675 , FQD5P10 , FQD5P20 , FQD6N25 , FQD6N40C , HUFA76419D_F085 , FQD6N50C .
