Справочник MOSFET. FQP12P10

 

FQP12P10 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQP12P10
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11.5 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.29 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

FQP12P10 Datasheet (PDF)

 ..1. Size:1058K  fairchild semi
fqp12p10.pdfpdf_icon

FQP12P10

November 2013FQP12P10P-Channel QFET MOSFET-100 V, -11.5 A, 290 m Description FeaturesThese P-Channel enhancement mode power field effect -11.5 A, -100 V, RDS(on) = 290 m (Max.) @ VGS = -10 V,transistors are produced using Fairchilds proprietary, ID = -5.75 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 21 nC)technology has been especial

 8.1. Size:759K  fairchild semi
fqp12p20.pdfpdf_icon

FQP12P10

May 2000TMQFETQFETQFETQFET 200V P-ChanneI MOSFETGeneraI Description FeaturesThese P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has bee

 9.1. Size:469K  1
fqp12n65c fqpf12n65c.pdfpdf_icon

FQP12P10

12N65 SeriesN-Channel MOSFET12A, 650V, N H FQP12N65C H12N65P P: TO-220AB12N65 HAOHAI 50Pcs 1000Pcs 5000PcsFQPF12N65C H12N65F F: TO-220FP12N65 Series Pin AssignmentFeaturesID=12AOriginative New Des

 9.2. Size:530K  fairchild semi
fqp12n60.pdfpdf_icon

FQP12P10

April 2000TMQFETQFETQFETQFETFQP12N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10.5A, 600V, RDS(on) = 0.7 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 42 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been

Другие MOSFET... FQB9P25 , FQD3P50 , FQD3P50TMF085 , FQD4N20 , FQP11P06 , FQD4N25 , FQD4P25 , FQD5N20L , RU6888R , FQD5N60C , FDS4675 , FQD5P10 , FQD5P20 , FQD6N25 , FQD6N40C , HUFA76419DF085 , FQD6N50C .

History: IXFN180N15P | SDF120JDA-D | IRLU3715 | DG840 | KNB1906A | FDPF8N50NZU | APT1004R2GN

 

 
Back to Top

 


 
.