RUH60120M Todos los transistores

 

RUH60120M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RUH60120M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 165 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 48 nS
   Cossⓘ - Capacitancia de salida: 745 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
   Paquete / Cubierta: DFN5060
     - Selección de transistores por parámetros

 

RUH60120M Datasheet (PDF)

 ..1. Size:283K  ruichips
ruh60120m.pdf pdf_icon

RUH60120M

RUH60120MN-Channel Advanced Power MOSFETFeatures Pin Description 60V/120A,RDS (ON) =4m(Typ.)@VGS=10VGRDS (ON) =4.5m(Typ.)@VGS=4.5V SSS Uses Ruichips Advanced RUISGTTM TechnologyD Low Gate Charge Minimizing Switching Loss Ultra Low On-ResistanceDD Excellent QgxRDS(on) product(FOM)DD 100% Avalanche TestedPIN1 Lead Free and Green Devic

 6.1. Size:321K  ruichips
ruh60120l.pdf pdf_icon

RUH60120M

RUH60120LN-Channel Advanced Power MOSFETFeatures Pin Description 60V/120A,DRDS (ON) =3.2m(Typ.)@VGS=10VRDS (ON) =3.6m(Typ.)@VGS=4.5V Uses Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 175C Operating TemperatureG Lead Free and Green Devices (RoHS Compliant) STO252DAppli

 8.1. Size:384K  ruichips
ruh60100m.pdf pdf_icon

RUH60120M

RUH60100MN-Channel Advanced Power MOSFETFeatures Pin Description 60V/100A,RDS (ON) =2.6m(Typ.)@VGS=10V DDDDRDS (ON) =3.6m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN5060DApplications LED backlighting On board power

 9.1. Size:225K  ruichips
ruh6080m3-c.pdf pdf_icon

RUH60120M

RUH6080M3-CN-Channel Advanced Power MOSFETFeatures Pin Description 60V/80A,RDS (ON) =5.3m(Typ.)@VGS=10V DDDRDS (ON) =6.5m(Typ.)@VGS=4.5VD Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching LossG Ultra Low On-ResistanceSS Excellent QgxRDS(on) product(FOM) S 100% Avalanche TestedPIN1 Lead Free and Green De

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