RUH60120M MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: RUH60120M
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 165 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 48 ns
Cossⓘ - Выходная емкость: 745 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
Тип корпуса: DFN5060
RUH60120M Datasheet (PDF)
ruh60120m.pdf
RUH60120MN-Channel Advanced Power MOSFETFeatures Pin Description 60V/120A,RDS (ON) =4m(Typ.)@VGS=10VGRDS (ON) =4.5m(Typ.)@VGS=4.5V SSS Uses Ruichips Advanced RUISGTTM TechnologyD Low Gate Charge Minimizing Switching Loss Ultra Low On-ResistanceDD Excellent QgxRDS(on) product(FOM)DD 100% Avalanche TestedPIN1 Lead Free and Green Devic
ruh60120l.pdf
RUH60120LN-Channel Advanced Power MOSFETFeatures Pin Description 60V/120A,DRDS (ON) =3.2m(Typ.)@VGS=10VRDS (ON) =3.6m(Typ.)@VGS=4.5V Uses Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 175C Operating TemperatureG Lead Free and Green Devices (RoHS Compliant) STO252DAppli
ruh60100m.pdf
RUH60100MN-Channel Advanced Power MOSFETFeatures Pin Description 60V/100A,RDS (ON) =2.6m(Typ.)@VGS=10V DDDDRDS (ON) =3.6m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN5060DApplications LED backlighting On board power
ruh6080m3-c.pdf
RUH6080M3-CN-Channel Advanced Power MOSFETFeatures Pin Description 60V/80A,RDS (ON) =5.3m(Typ.)@VGS=10V DDDRDS (ON) =6.5m(Typ.)@VGS=4.5VD Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching LossG Ultra Low On-ResistanceSS Excellent QgxRDS(on) product(FOM) S 100% Avalanche TestedPIN1 Lead Free and Green De
ruh6080r.pdf
RUH6080RN-Channel Advanced Power MOSFETFeatures Pin Description 60V/80A, RDS (ON) =6.2m(Typ.)@VGS=10V RDS (ON) =7m(Typ.)@VGS=4.5V Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching Loss Ultra Low On-ResistanceUlt L O R i t Exceptional dv/dt Capability Fast Switching and Fully Avalanche Rated 100% Avalanche Tested
ruh60d60m.pdf
RUH60D60MDual N-Channel Advanced Power MOSFETFeatures Pin Description 60V/60A,D2RDS (ON) =7.2m(Typ.)@VGS=10VD2D1RDS (ON) =8.2m(Typ.)@VGS=4.5VD1 Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching LossG2 Ultra Low On-ResistanceS2G1 Excellent QgxRDS(on) product(FOM)S1 100% Avalanche TestedPIN1 Lead Free
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: 40600 | HQB7N65C | HPM2305 | 2N6659 | HPM3401A | IRF5305
History: 40600 | HQB7N65C | HPM2305 | 2N6659 | HPM3401A | IRF5305
Список транзисторов
Обновления
MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD