RUH85100M-C Todos los transistores

 

RUH85100M-C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RUH85100M-C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 192 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 32.5 nS
   Cossⓘ - Capacitancia de salida: 350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: DFN5060

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RUH85100M-C Datasheet (PDF)

 ..1. Size:280K  ruichips
ruh85100m-c.pdf

RUH85100M-C
RUH85100M-C

RUH85100M-CN-Channel Advanced Power MOSFETFeatures Pin Description 85V/100A,RDS (ON) =6.5m(Typ.)@VGS=10VDRDS (ON) =9.5m(Typ.)@VGS=4.5VD Ultra Low On-ResistanceD Fast Switching SpeedD 100% Avalanche Tested Uses Ruichips advanced RUISGTTM technologyG Lead Free and Green Devices (RoHS Compliant)SSSPIN1DFN5060DApplications Syn

 8.1. Size:279K  ruichips
ruh85120m-c.pdf

RUH85100M-C
RUH85100M-C

RUH85120M-CN-Channel Advanced Power MOSFETFeatures Pin Description 85V/120A,GRDS (ON) =4m(Typ.)@VGS=10VSSRDS (ON) =5.5m(Typ.)@VGS=4.5V SD Ultra Low On-Resistance Fast Switching SpeedDD 100% Avalanche TestedDD Uses Ruichips advanced SGTTM technology Lead Free and Green Devices (RoHS Compliant)PIN1DFN5060DApplications Synchronou

 8.2. Size:375K  ruichips
ruh85150r.pdf

RUH85100M-C
RUH85100M-C

RUH85150RN-Channel Advanced Power MOSFETFeatures Pin Description 85V/150A, RDS (ON) =3.4m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)GDSTO220DDDDDDAppl

 8.3. Size:687K  ruichips
ruh85120s.pdf

RUH85100M-C
RUH85100M-C

RUH85120SN-Channel Advanced Power MOSFETFeatures Pin Description 85V/120A,DRDS (ON) =4.6m(Typ.)@VGS=10V Uses Ruichips advanced SGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d Fast Switching and Fully Avalanche Rated Lead Free and Green Devices (RoHS Compliant)GSTO263DDDDD

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History: RUH6080M3-C | IRF5305 | JNFH20N60E | RUH40D40M | NCEP8588 | HQB7N65C | 40600

 

 
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History: RUH6080M3-C | IRF5305 | JNFH20N60E | RUH40D40M | NCEP8588 | HQB7N65C | 40600

RUH85100M-C
  RUH85100M-C
  RUH85100M-C
 

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