RUH85350T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RUH85350T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 555 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 350 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 73 nS
Cossⓘ - Capacitancia de salida: 3950 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0016 Ohm
Paquete / Cubierta: TOLL
Búsqueda de reemplazo de RUH85350T MOSFET
RUH85350T Datasheet (PDF)
ruh85350t.pdf

RUH85350TN-Channel Advanced Power MOSFETFeatures Pin Description 85V/350A,11RDS (ON) =1.3m(Typ.)@VGS=10V910 Using Ruichips Advanced RUISGTTM Technology109 Ultra Low On-Resistance Excellent Qg&RDS(on) Performance1111 Low Gate Charge Minimizing Switching LossL G t Ch Mi i i i S it hi L2 834 76 100% Avalanche Tested56 54 Lead Free
ruh85120m-c.pdf

RUH85120M-CN-Channel Advanced Power MOSFETFeatures Pin Description 85V/120A,GRDS (ON) =4m(Typ.)@VGS=10VSSRDS (ON) =5.5m(Typ.)@VGS=4.5V SD Ultra Low On-Resistance Fast Switching SpeedDD 100% Avalanche TestedDD Uses Ruichips advanced SGTTM technology Lead Free and Green Devices (RoHS Compliant)PIN1DFN5060DApplications Synchronou
ruh85150r.pdf

RUH85150RN-Channel Advanced Power MOSFETFeatures Pin Description 85V/150A, RDS (ON) =3.4m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)GDSTO220DDDDDDAppl
ruh85120s.pdf

RUH85120SN-Channel Advanced Power MOSFETFeatures Pin Description 85V/120A,DRDS (ON) =4.6m(Typ.)@VGS=10V Uses Ruichips advanced SGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d Fast Switching and Fully Avalanche Rated Lead Free and Green Devices (RoHS Compliant)GSTO263DDDDD
Otros transistores... RUH6080R , RUH60D60M , RUH85100M-C , RUH85120M-C , RUH85120S , RUH85150R , RUH85210R , RUH85230S , IRLZ44N , RUQ4040M2 , H0110D , H0110K , H01H14B , H01H14D , H01P13D , H01P13K , H10N60P .
History: VBZE30N06
History: VBZE30N06



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
hy4008 | ncep039n10m | 20n50 | 2sc869 | tip29 transistor equivalent | 2n555 | 2sa564a | c815 transistor