RUH85350T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: RUH85350T
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 555 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 350 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 198 nC
trⓘ - Время нарастания: 73 ns
Cossⓘ - Выходная емкость: 3950 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0016 Ohm
Тип корпуса: TOLL
RUH85350T Datasheet (PDF)
ruh85350t.pdf
RUH85350TN-Channel Advanced Power MOSFETFeatures Pin Description 85V/350A,11RDS (ON) =1.3m(Typ.)@VGS=10V910 Using Ruichips Advanced RUISGTTM Technology109 Ultra Low On-Resistance Excellent Qg&RDS(on) Performance1111 Low Gate Charge Minimizing Switching LossL G t Ch Mi i i i S it hi L2 834 76 100% Avalanche Tested56 54 Lead Free
ruh85120m-c.pdf
RUH85120M-CN-Channel Advanced Power MOSFETFeatures Pin Description 85V/120A,GRDS (ON) =4m(Typ.)@VGS=10VSSRDS (ON) =5.5m(Typ.)@VGS=4.5V SD Ultra Low On-Resistance Fast Switching SpeedDD 100% Avalanche TestedDD Uses Ruichips advanced SGTTM technology Lead Free and Green Devices (RoHS Compliant)PIN1DFN5060DApplications Synchronou
ruh85150r.pdf
RUH85150RN-Channel Advanced Power MOSFETFeatures Pin Description 85V/150A, RDS (ON) =3.4m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)GDSTO220DDDDDDAppl
ruh85120s.pdf
RUH85120SN-Channel Advanced Power MOSFETFeatures Pin Description 85V/120A,DRDS (ON) =4.6m(Typ.)@VGS=10V Uses Ruichips advanced SGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d Fast Switching and Fully Avalanche Rated Lead Free and Green Devices (RoHS Compliant)GSTO263DDDDD
ruh85230s.pdf
RUH85230SN-Channel Advanced Power MOSFETFeatures Pin Description 85V/230A,D RDS (ON) =2.5m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)GSTO263DDDDDDAppl
ruh85100m-c.pdf
RUH85100M-CN-Channel Advanced Power MOSFETFeatures Pin Description 85V/100A,RDS (ON) =6.5m(Typ.)@VGS=10VDRDS (ON) =9.5m(Typ.)@VGS=4.5VD Ultra Low On-ResistanceD Fast Switching SpeedD 100% Avalanche Tested Uses Ruichips advanced RUISGTTM technologyG Lead Free and Green Devices (RoHS Compliant)SSSPIN1DFN5060DApplications Syn
ruh85210r.pdf
RUH85210RN-Channel Advanced Power MOSFETFeatures Pin Description 85V/210A, RDS (ON) =2.8m(Typ.)@VGS=10V Uses Ruichips advanced SGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d Fast Switching and Fully Avalanche Rated Lead Free and Green Devices (RoHS Compliant)GDSTO220DDDDD
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918