FQD5P10 Todos los transistores

 

FQD5P10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQD5P10

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 25 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 3.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 1.05 Ohm

Empaquetado / Estuche: TO252, DPAK

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FQD5P10 Datasheet (PDF)

1.1. fqd5p10tf fqd5p10tm.pdf Size:705K _fairchild_semi

FQD5P10
FQD5P10

October 2008 QFET® FQD5P10 / FQU5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -3.6A, -100V, RDS(on) = 1.05Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 18 pF) This advanced technology has been espec

1.2. fqd5p10 fqu5p10.pdf Size:705K _fairchild_semi

FQD5P10
FQD5P10

October 2008 QFET FQD5P10 / FQU5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.6A, -100V, RDS(on) = 1.05? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especially tailored

 5.1. fqd5p20 fqu5p20.pdf Size:657K _fairchild_semi

FQD5P10
FQD5P10

October 2008 QFET FQD5P20 / FQU5P20 200V P-Channel MOSFET Features General Description -3.7A, -200V, RDS(on) = 1.4? @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 10 nC) transistors are produced using Fairchilds proprietary, Low Crss ( typical 12 pF) planar stripe, DMOS technology. Fast switching This advanced technology has been e

5.2. fqd5p20tf fqd5p20tm.pdf Size:657K _fairchild_semi

FQD5P10
FQD5P10

October 2008 QFET® FQD5P20 / FQU5P20 200V P-Channel MOSFET Features General Description • -3.7A, -200V, RDS(on) = 1.4Ω @VGS = -10 V These P-Channel enhancement mode power field effect • Low gate charge ( typical 10 nC) transistors are produced using Fairchild’s proprietary, • Low Crss ( typical 12 pF) planar stripe, DMOS technology. • Fast switching This advanced techn

Otros transistores... FQD4N20 , FQP11P06 , FQD4N25 , FQD4P25 , FQD5N20L , FQP12P10 , FQD5N60C , FDS4675 , APT50M38JLL , FQD5P20 , FQD6N25 , FQD6N40C , HUFA76419D_F085 , FQD6N50C , FQD7N10L , HUFA75645S3S , FQD7N20L .

 

 
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