FQD5P10 MOSFET Datasheet: P-Ch, 100V, 3.6A. Full specification with pinout and replacement list

FQD5P10 Specs and Replacement

Type Designator: FQD5P10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm

Package: TO252 DPAK

FQD5P10 substitution

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FQD5P10 datasheet

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fqd5p10tf fqd5p10tm fqd5p10 fqu5p10.pdf pdf_icon

October 2008 QFET FQD5P10 / FQU5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.6A, -100V, RDS(on) = 1.05 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been espec... See More ⇒

9.1. Size:657K fairchild semi
fqd5p20tf fqd5p20tm fqd5p20 fqu5p20 fqu5p20tu.pdf pdf_icon

October 2008 QFET FQD5P20 / FQU5P20 200V P-Channel MOSFET Features General Description -3.7A, -200V, RDS(on) = 1.4 @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 10 nC) transistors are produced using Fairchild s proprietary, Low Crss ( typical 12 pF) planar stripe, DMOS technology. Fast switching This advanced techn... See More ⇒

Detailed specifications: FQD4N20, FQP11P06, FQD4N25, FQD4P25, FQD5N20L, FQP12P10, FQD5N60C, FDS4675, IRLB3034, FQD5P20, FQD6N25, FQD6N40C, HUFA76419DF085, FQD6N50C, FQD7N10L, HUFA75645S3S, FQD7N20L