H4N60F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

4N60 SeriesN-Channel MOSFET4A, 600V, N H FQP4N60C H4N60P P: TO-220ABHAOHAI 50Pcs 1000Pcs 5000Pcs4N60FQPF4N60C H4N60F F: TO-220FP4N60 Series Pin AssignmentID=4AAPPLICATIONELECTRONIC BALLAST

SSH4N55 PCB24

LNC4N60\LND4N60\LNG4N60\LNH4N60\LNF4N60Lonten N-channel 600V, 4A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 600VDSSadvanced planar VDMOS technology. The I 4ADresulting device has low conduction resistance, R 2.4DS(on),maxsuperior switching performance and high avalance Q 12.8 nCg,typenergy.Features Low RDS(on) Low gate

LNC4N60\LND4N60\LNG4N60\LNH4N60 Lonten N-channel 600V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planar VDMOS technology. The ID 4A resulting device has low conduction resistance, RDS(on),max 2.4 superior switching performance and high avalance Qg,typ 12.8 nC energy. Features Low RDS(on) Low gate charge

4N60 SeriesN-Channel MOSFET4A, 600V, N H FQU4N60C H4N60U U: TO-251 80/ 4Kpcs/ 24KpcsHAOHAI4N60FQD4N60C H4N60D D: TO-252 25Kpcs 2.5K/ 5Kpcs/4N60 Series Pin AssignmentAPPLICATIONID=4A