H6N70D MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

H6N70D datasheet

..1. Size:375K cn haohai electr
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6N70 Series N-Channel MOSFET 6A, 700V, N H FQU6N70C H6N70U U TO-251 80 / 4Kpcs/ 24Kpcs HAOHAI 6N70 FQD6N70C H6N70D D TO-252 25Kpcs 2.5K/ 5Kpcs/ 6N70 Series Pin Assignment APPLICATION ID=6A

9.1. Size:935K samsung
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Advanced Power MOSFET FEATURES BVDSS = 700 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 700V Low RDS(ON) 1.552 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

9.2. Size:409K cn haohai electr
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6N70 Series N-Channel MOSFET 6A, 700V, N H FQP6N70C H6N70P P TO-220AB HAOHAI 50Pcs 1000Pcs 5000Pcs 6N70 FQPF6N70C H6N70F F TO-220FP 6N70 Series Pin Assignment Features ID=6A Originative New Design BVD

Otros transistores... H5N50D , H5N60P , H5N60F , H5N60U , H5N60D , H6N70P , H6N70F , H6N70U , AON7403 , H7N60P , H7N60F , H8N60P , H8N60F , H8N65P , H8N65F , H90N71P , H90N71F .