NCE18ND11U Todos los transistores

 

NCE18ND11U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE18ND11U
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 18 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.9 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0074 Ohm
   Paquete / Cubierta: DFN2X3-6L
 

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NCE18ND11U Datasheet (PDF)

 ..1. Size:295K  ncepower
nce18nd11u.pdf pdf_icon

NCE18ND11U

NCE18ND11Uhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE18ND11U uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =18V,ID =11A RDS(ON)

 9.1. Size:384K  ncepower
nce1810ak.pdf pdf_icon

NCE18ND11U

Pb Free Producthttp://www.ncepower.com NCE1810AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1810AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =180V,ID =10A Schematic diagram RDS(ON)

 9.2. Size:388K  ncepower
nce1826k.pdf pdf_icon

NCE18ND11U

Pb Free Producthttp://www.ncepower.com NCE1826KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1826K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =185V,ID =26A RDS(ON)

 9.3. Size:331K  ncepower
nce1805s.pdf pdf_icon

NCE18ND11U

Pb Free Producthttp://www.ncepower.com NCE1805SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1805S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS =185V,ID =5A RDS(ON)

Otros transistores... NCE025N30K , NCE035N30G , NCE035N30K , NCE042N30K , NCE048N30Q , NCE1220SP , NCE1227SP , NCE1230SP , 4N60 , NCE2004NE , NCE2006NE , NCE2007NS , NCE2008E , NCE2008N , NCE20ND06 , NCE20ND07U , NCE20ND08U .

History: NTHL082N65S3F | FDBL86210-F085 | KIA3510A-263

 

 
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