NCE18ND11U Todos los transistores

 

NCE18ND11U MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE18ND11U

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 18 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.9 nS

Cossⓘ - Capacitancia de salida: 250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0074 Ohm

Encapsulados: DFN2X3-6L

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NCE18ND11U datasheet

 ..1. Size:295K  ncepower
nce18nd11u.pdf pdf_icon

NCE18ND11U

NCE18ND11U http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE18ND11U uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =18V,ID =11A RDS(ON)

 9.1. Size:384K  ncepower
nce1810ak.pdf pdf_icon

NCE18ND11U

Pb Free Product http //www.ncepower.com NCE1810AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1810AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =180V,ID =10A Schematic diagram RDS(ON)

 9.2. Size:388K  ncepower
nce1826k.pdf pdf_icon

NCE18ND11U

Pb Free Product http //www.ncepower.com NCE1826K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1826K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =185V,ID =26A RDS(ON)

 9.3. Size:331K  ncepower
nce1805s.pdf pdf_icon

NCE18ND11U

Pb Free Product http //www.ncepower.com NCE1805S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1805S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS =185V,ID =5A RDS(ON)

Otros transistores... NCE025N30K , NCE035N30G , NCE035N30K , NCE042N30K , NCE048N30Q , NCE1220SP , NCE1227SP , NCE1230SP , 12N60 , NCE2004NE , NCE2006NE , NCE2007NS , NCE2008E , NCE2008N , NCE20ND06 , NCE20ND07U , NCE20ND08U .

 

 

 


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