Справочник MOSFET. NCE18ND11U

 

NCE18ND11U Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE18ND11U
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 18 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 5.9 ns
   Cossⓘ - Выходная емкость: 250 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0074 Ohm
   Тип корпуса: DFN2X3-6L
 

 Аналог (замена) для NCE18ND11U

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE18ND11U Datasheet (PDF)

 ..1. Size:295K  ncepower
nce18nd11u.pdfpdf_icon

NCE18ND11U

NCE18ND11Uhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE18ND11U uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =18V,ID =11A RDS(ON)

 9.1. Size:384K  ncepower
nce1810ak.pdfpdf_icon

NCE18ND11U

Pb Free Producthttp://www.ncepower.com NCE1810AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1810AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =180V,ID =10A Schematic diagram RDS(ON)

 9.2. Size:388K  ncepower
nce1826k.pdfpdf_icon

NCE18ND11U

Pb Free Producthttp://www.ncepower.com NCE1826KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1826K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =185V,ID =26A RDS(ON)

 9.3. Size:331K  ncepower
nce1805s.pdfpdf_icon

NCE18ND11U

Pb Free Producthttp://www.ncepower.com NCE1805SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1805S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS =185V,ID =5A RDS(ON)

Другие MOSFET... NCE025N30K , NCE035N30G , NCE035N30K , NCE042N30K , NCE048N30Q , NCE1220SP , NCE1227SP , NCE1230SP , 4N60 , NCE2004NE , NCE2006NE , NCE2007NS , NCE2008E , NCE2008N , NCE20ND06 , NCE20ND07U , NCE20ND08U .

History: IRHM57064 | STP315N10F7 | STFI9N60M2 | LU120N | 2SK1214 | SE100P60 | TPN2R203NC

 

 
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