IRFS450B Todos los transistores

 

IRFS450B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFS450B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 96 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 9.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 87 nC

Resistencia drenaje-fuente RDS(on): 0.39 Ohm

Empaquetado / Estuche: TO3PF

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IRFS450B Datasheet (PDF)

1.1. irfs450b.pdf Size:687K _fairchild_semi

IRFS450B
IRFS450B

November 2001 IRFS450B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.6A, 500V, RDS(on) = 0.39Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 87 nC) planar, DMOS technology. • Low Crss ( typical 60 pF) This advanced technology has been especially tailored to • Fast

4.1. irfs4510pbf irfsl4510pbf.pdf Size:256K _upd

IRFS450B
IRFS450B

PD - 97771 IRFS4510PbF IRFSL4510PbF HEXFET® Power MOSFET D Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 11.3mΩ l Uninterruptible Power Supply l High Speed Power Switching G max. 13.9mΩ l Hard Switched and High Frequency Circuits ID (Silicon Limited) 61A S Benefits D l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedness l

4.2. irfs4510.pdf Size:258K _inchange_semiconductor

IRFS450B
IRFS450B

Isc N-Channel MOSFET Transistor IRFS4510 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

Otros transistores... FQD5P20 , FQD6N25 , FQD6N40C , HUFA76419D_F085 , FQD6N50C , FQD7N10L , HUFA75645S3S , FQD7N20L , 2SK4106 , FQD7N30 , FQD7P06 , FQD7P20 , FQD8P10 , FQD8P10TM_F085 , FQD9N25 , FQD9N25TM_F085 , FQH44N10 .

 

 
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Recientemente añadidas las descripciónes de los transistores:

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