All MOSFET. IRFS450B Datasheet

 

IRFS450B MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFS450B

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 96 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 9.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 87 nC

Maximum Drain-Source On-State Resistance (Rds): 0.39 Ohm

Package: TO3PF

IRFS450B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFS450B Datasheet (PDF)

0.1. irfs450b.pdf Size:687K _fairchild_semi

IRFS450B
IRFS450B

November 2001 IRFS450B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.6A, 500V, RDS(on) = 0.39Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 87 nC) planar, DMOS technology. • Low Crss ( typical 60 pF) This advanced technology has been especially tailored to • Fast

8.1. irfs4510pbf irfsl4510pbf.pdf Size:256K _international_rectifier

IRFS450B
IRFS450B

PD - 97771 IRFS4510PbF IRFSL4510PbF HEXFET® Power MOSFET D Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 11.3mΩ l Uninterruptible Power Supply l High Speed Power Switching G max. 13.9mΩ l Hard Switched and High Frequency Circuits ID (Silicon Limited) 61A S Benefits D l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedness l

 9.1. irfs460.pdf Size:231K _fairchild_semi

IRFS450B
IRFS450B

IRFS460 FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology RDS(on) = 0.25Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 12.4 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3PF ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 0.197Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charact

9.2. irfs4115pbf irfsl4115pbf.pdf Size:286K _international_rectifier

IRFS450B
IRFS450B

PD - 96198A IRFS4115PbF IRFSL4115PbF HEXFET® Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply RDS(on) typ. 10.3m l High Speed Power Switching max. 12.1m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 99A Benefits ID (Package Limited) 195A S l Improved Gate, Avalanche and Dynamic

 9.3. irfs4321-7ppbf.pdf Size:404K _international_rectifier

IRFS450B
IRFS450B

IRFS4321-7PPbF HEXFET® Power MOSFET Application  Motion Control Applications D VDSS 150V  High Efficiency Synchronous Rectification in SMPS  Uninterruptible Power Supply RDS(on) typ. 11.7m  Hard Switched and High Frequency Circuits G 14.7m max S ID 86A Benefits  Low Rdson Reduces Losses  Low Gate Charge Improves the Sw

9.4. irfs4010-7ppbf.pdf Size:313K _international_rectifier

IRFS450B
IRFS450B

PD - 97343 IRFS4010-7PPbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 3.3mΩ l High Speed Power Switching G max. 4.0mΩ l Hard Switched and High Frequency Circuits ID 190A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedness l Fully Characterized Capacitance and

 9.5. irfs4615pbf irfsl4615pbf.pdf Size:365K _international_rectifier

IRFS450B
IRFS450B

PD -96202 IRFS4615PbF IRFSL4615PbF HEXFET® Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 34.5m l High Speed Power Switching G max. 42m l Hard Switched and High Frequency Circuits ID 33A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Capac

9.6. irfb4610pbf irfs4610pbf irfsl4610pbf.pdf Size:399K _international_rectifier

IRFS450B
IRFS450B

PD - 95936C IRFB4610PbF IRFS4610PbF IRFSL4610PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching 11m RDS(on) typ. l Hard Switched and High Frequency Circuits G max. 14m ID 73A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

9.7. irfb4310zpbf irfs4310zpbf irfsl4310zpbf.pdf Size:324K _international_rectifier

IRFS450B
IRFS450B

PD - 97115D IRFB4310ZPbF IRFS4310ZPbF IRFSL4310ZPbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m : l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 127A c ID (Package Limited) 120A S Benefits l Improved Gate,

9.8. irfs42n20d.pdf Size:67K _international_rectifier

IRFS450B
IRFS450B

PD - 94114 PROVISIONAL IRFB42N20D IRFS42N20D SMPS MOSFET IRFSL42N20D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.055Ω 42.6A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262 Fully Charac

9.9. auirfs4310trl.pdf Size:334K _international_rectifier

IRFS450B
IRFS450B

PD - 96324 AUTOMOTIVE GRADE AUIRFS4310 AUIRFSL4310 Features HEXFET® Power MOSFET l Advanced Process Technology V(BR)DSS l Ultra Low On-Resistance 100V D l 175°C Operating Temperature RDS(on) typ. 5.6mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 7.0mΩ G l Lead-Free, RoHS Compliant ID (Silicon Limited) 130A l Automotive Qualified * S ID (Package L

9.10. irfs4227pbf irfsl4227pbf.pdf Size:357K _international_rectifier

IRFS450B
IRFS450B

PD - 96131A IRFS4227PbF PDP SWITCH IRFSL4227PbF Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, VDS (Avalanche) typ. 240 V Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 22 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 130 A and Pass Switch

9.11. irfs4321pbf irfsl4321pbf.pdf Size:353K _international_rectifier

IRFS450B
IRFS450B

PD - 97105C IRFS4321PbF IRFSL4321PbF Applications HEXFET® Power MOSFET l Motion Control Applications VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 12m : l Hard Switched and High Frequency Circuits max. 15m : Benefits 85A c ID l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching D Performance D D

9.12. irfs4228pbf irfsl4228pbf.pdf Size:371K _international_rectifier

IRFS450B
IRFS450B

PD - 97231A IRFS4228PbF PDP SWITCH IRFSL4228PbF Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for PDP VDS min 150 V Sustain, Energy Recovery and Pass VDS (Avalanche) typ. 180 V Switch Applications RDS(ON) typ. @ 10V m 12 l Low EPULSE Rating to Reduce Power IRP max @ TC= 100°C 170 A Dissipation in PDP Sustain, Energy TJ max 175 °C Reco

9.13. irfs4620pbf irfsl4620pbf.pdf Size:359K _international_rectifier

IRFS450B
IRFS450B

PD -96203 IRFS4620PbF IRFSL4620PbF HEXFET® Power MOSFET Applications D VDSS 200V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 63.7m l High Speed Power Switching G max. 77.5m l Hard Switched and High Frequency Circuits ID 24A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Cap

9.14. auirfs4610trl.pdf Size:340K _international_rectifier

IRFS450B
IRFS450B

PD - 96325 AUTOMOTIVE GRADE AUIRFB4610 AUIRFS4610 Features HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance V(BR)DSS 100V Enhanced dV/dT and dI/dT capability RDS(on) typ. 11m 175°C Operating Temperature Fast Switching max. 14m G Repetitive Avalanche Allowed up to Tjmax ID 73A Lead-Free, RoHS Compliant S Automotive Qualified * D Descripti

9.15. irfs4710 irfsl4710.pdf Size:195K _international_rectifier

IRFS450B
IRFS450B

PD- 94080 IRFB4710 IRFS4710 IRFSL4710 HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.014Ω 75A Motor Control Uninterrutible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262

9.16. irfs41n15d.pdf Size:193K _international_rectifier

IRFS450B
IRFS450B

PD- 93804A IRFB41N15D IRFS41N15D SMPS MOSFET IRFSL41N15D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.045Ω 41A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current

9.17. irfs4010pbf irfsl4010pbf.pdf Size:292K _international_rectifier

IRFS450B
IRFS450B

PD - 96186A IRFS4010PbF IRFSL4010PbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 3.9m l High Speed Power Switching G max. 4.7m l Hard Switched and High Frequency Circuits ID 180A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Ca

9.18. irfs4229pbf.pdf Size:310K _international_rectifier

IRFS450B
IRFS450B

PD - 97080B IRFS4229PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 42 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 91 A and Pass Switch Application

9.19. irfs4115-7ppbf.pdf Size:302K _international_rectifier

IRFS450B
IRFS450B

PD -97147 IRFS4115-7PPbF HEXFET® Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 10.0m : l High Speed Power Switching l Hard Switched and High Frequency Circuits G max. 11.8m : ID 105A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance

9.20. irfb41n15dpbf irfib41n15dpbf irfs41n15dpbf.pdf Size:337K _international_rectifier

IRFS450B
IRFS450B

PD - 94927A IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications HEXFET® Power MOSFET l High frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID Benefits 150V 0.045 41A l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avala

9.21. irfs4410pbf irfsl4410pbf.pdf Size:799K _international_rectifier

IRFS450B
IRFS450B

PD - 95707E IRFB4410PbF IRFS4410PbF IRFSL4410PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching RDS(on) typ. 8.0m l Hard Switched and High Frequency Circuits G max. 10m ID S 88A Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

9.22. irfb4310pbf irfs4310pbf irfsl4310pbf.pdf Size:376K _international_rectifier

IRFS450B
IRFS450B

PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 5.6m G max. 7.0m ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

9.23. irfs4020pbf irfsl4020pbf.pdf Size:331K _international_rectifier

IRFS450B
IRFS450B

PD - 97393 IRFS4020PbF DIGITAL AUDIO MOSFET IRFSL4020PbF Features Key Parameters • Key parameters optimized for Class-D audio VDS 200 V amplifier applications mΩ RDS(ON) typ. @ 10V 85 • Low RDSON for improved efficiency Qg typ. 18 nC • Low QG and QSW for better THD and improved Qsw typ. 6.7 nC RG(int) typ. efficiency 3.2 Ω TJ max 175 °C • Low QRR for better

9.24. irfs4127pbf irfsl4127pbf.pdf Size:355K _international_rectifier

IRFS450B
IRFS450B

PD - 96177 IRFS4127PbF IRFSL4127PbF HEXFET® Power MOSFET Applications D VDSS 200V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 18.6m l High Speed Power Switching G max. 22m l Hard Switched and High Frequency Circuits ID 72A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D D l Fully Characterized Capa

9.25. irfb4410zpbf irfs4410zpbf irfsl4410zpbf.pdf Size:330K _international_rectifier

IRFS450B
IRFS450B

IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET® Power MOSFET Applications D VDSS l High Efficiency Synchronous Rectification in SMPS 100V l Uninterruptible Power Supply RDS(on) typ. 7.2m l High Speed Power Switching G max. 9.0m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 97A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness D l

9.26. irfb4710pbf irfs4710pbf irfsl4710pbf.pdf Size:662K _international_rectifier

IRFS450B
IRFS450B

PD- 95146 IRFB4710PbF IRFS4710PbF IRFSL4710PbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.014Ω 75A Motor Control Uninterrutible Power Supplies Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-2

9.27. irfs1xx irfs2xx irfs3xx irfs4xx.pdf Size:26K _samsung

IRFS450B



Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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