IRFS450B PDF and Equivalents Search

 ..1. Size:687K  fairchild semi
 irfs450b.pdf

November 2001 IRFS450B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.6A, 500V, RDS(on) = 0.39 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 87 nC) planar, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to Fast ... See More ⇒

 7.1. Size:187K  1
 irfs450.pdf

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 7.2. Size:233K  1
 irfs450a.pdf

IRFS450A FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.6 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 0.308 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characte... See More ⇒

 7.3. Size:275K  1
 irfs450 irfs451.pdf

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 7.4. Size:238K  inchange semiconductor
 irfs450a.pdf

isc N-Channel MOSFET Transistor IRFS450A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose appl... See More ⇒