NCE30H10BK Todos los transistores

 

NCE30H10BK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE30H10BK
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.1 V
   Qgⓘ - Carga de la puerta: 57.2 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 348 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: TO-252
 

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NCE30H10BK Datasheet (PDF)

 ..1. Size:681K  ncepower
 nce30h10bk.pdf pdf_icon

NCE30H10BK

http://www.ncepower.com NCE30H10BKNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H10BK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =100ADS DR

 5.1. Size:637K  ncepower
 nce30h10bg.pdf pdf_icon

NCE30H10BK

http://www.ncepower.com NCE30H10BGNCE N-Channel Enhancement Mode Power MOSFETDescription General FeaturesThe NCE30H10BG uses advanced trench technology and V =30V,I =100ADS Ddesign to provide excellent R with low gate charge. It can R

 6.1. Size:331K  ncepower
 nce30h10g.pdf pdf_icon

NCE30H10BK

http://www.ncepower.com NCE30H10GNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065G uses advanced trench technology and design General Features to provide excellent RDS(ON) with low gate charge. It can be VDS =30V,ID =100A used in a wide variety of applications. RDS(ON)=1.9m (typical) @ VGS=10V RDS(ON)=2.9m (typical) @ VGS=4.5V Application DC/

 6.2. Size:373K  ncepower
 nce30h10.pdf pdf_icon

NCE30H10BK

Pb Free Producthttp://www.ncepower.com NCE30H10NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE2008N , NCE20ND06 , NCE20ND07U , NCE20ND08U , NCE20ND15Q , NCE20PD05 , NCE25P60K , NCE3068Q , 18N50 , NCE30H28 , NCE30ND07BS , NCE30PD08S , NCE3404X , NCE4003A , NCE40H14 , NCE40ND25Q , NCE4606C .

 

 
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