NCE30H10BK - параметры транзистора MOSFET, его аналоги, datasheet

NCE30H10BK Datasheet (PDF)

..1. Size:681K ncepower
nce30h10bk.pdf pdf_icon

http://www.ncepower.com NCE30H10BKNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H10BK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =100ADS DR

5.1. Size:637K ncepower
nce30h10bg.pdf pdf_icon

http://www.ncepower.com NCE30H10BGNCE N-Channel Enhancement Mode Power MOSFETDescription General FeaturesThe NCE30H10BG uses advanced trench technology and V =30V,I =100ADS Ddesign to provide excellent R with low gate charge. It can R

6.1. Size:331K ncepower
nce30h10g.pdf pdf_icon

http://www.ncepower.com NCE30H10GNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065G uses advanced trench technology and design General Features to provide excellent RDS(ON) with low gate charge. It can be VDS =30V,ID =100A used in a wide variety of applications. RDS(ON)=1.9m (typical) @ VGS=10V RDS(ON)=2.9m (typical) @ VGS=4.5V Application DC/

6.2. Size:373K ncepower
nce30h10.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE30H10NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)