NCE30ND07BS Todos los transistores

 

NCE30ND07BS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE30ND07BS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 6.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.5 nS

Cossⓘ - Capacitancia de salida: 39 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.034 Ohm

Encapsulados: SOP-8

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NCE30ND07BS datasheet

 ..1. Size:292K  ncepower
 nce30nd07bs.pdf pdf_icon

NCE30ND07BS

NCE30ND07BS http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07BS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =6.5A RDS(ON)

 5.1. Size:356K  ncepower
 nce30nd07s.pdf pdf_icon

NCE30ND07BS

Pb Free Product NCE30ND07S http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS =30V,ID =7A RDS(ON)

 5.2. Size:368K  ncepower
 nce30nd07as.pdf pdf_icon

NCE30ND07BS

NCE30ND07AS http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =7A RDS(ON)

 6.1. Size:384K  ncepower
 nce30nd09s.pdf pdf_icon

NCE30ND07BS

Pb Free Product http //www.ncepower.com NCE30ND09S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =9A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE20ND07U , NCE20ND08U , NCE20ND15Q , NCE20PD05 , NCE25P60K , NCE3068Q , NCE30H10BK , NCE30H28 , IRFP250 , NCE30PD08S , NCE3404X , NCE4003A , NCE40H14 , NCE40ND25Q , NCE4606C , NCE4612SP , NCE4614B .

 

 

 

 

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