NCE30PD08S Todos los transistores

 ..1. Size:343K  ncepower
 nce30pd08s.pdf

NCE30PD08S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30PD08S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. Schematic diagram General Features VDS = -30V,ID = -8A RDS(ON)

 8.1. Size:334K  ncepower
 nce30p25s.pdf

Pb Free Product http //www.ncepower.com NCE30P25S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P25S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features Schematic diagram VDS = -30V,ID = -25A RDS(ON)

 8.2. Size:577K  ncepower
 nce30p55k.pdf

NCE30P55K http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P55K uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for high current load applications. General Features V =-30V,I =-55A DS D Schematic diagram R

 8.3. Size:729K  ncepower
 nce30p40k.pdf

http //www.ncepower.com NCE30P40K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P40K uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for high current load applications. General Features V = -30V,I = -40A Schematic diagram DS D R =7.8m @ V = -10V (Typ) DS(ON) GS R =11.5m @ V = -4.5V

 8.4. Size:348K  ncepower
 nce30p50g.pdf

Pb Free Product http //www.ncepower.com NCE30P50G NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P50G uses advanced trench technology and D design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. G General Features VDS =-30V,ID =-50A S RDS(ON)

 8.5. Size:341K  ncepower
 nce30p15s.pdf

Pb Free Product http //www.ncepower.com NCE30P15S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P15S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -15A RDS(ON)

 8.6. Size:256K  ncepower
 nce30p28q.pdf

http //www.ncepower.com NCE30P28Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P28Q uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. Schematic diagram General Features VDS = -30V,ID = -28A RDS(ON)

 8.7. Size:710K  ncepower
 nce30p12bs.pdf

http //www.ncepower.com NCE30P12BS NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P12BS uses advanced trench technology to provide excellent R , low gate charge and operation with DS(ON) gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features V = -30V,I = -12A Schematic diagram DS D R

 8.8. Size:335K  ncepower
 nce30p30l.pdf

 8.9. Size:735K  ncepower
 nce30p25bq.pdf

http //www.ncepower.com NCE30P25BQ NCE P-Channel Enhancement Mode Power MOSFET General Features V = -30V,I = -25A DS D Description R

 8.10. Size:682K  ncepower
 nce30p25q.pdf

http //www.ncepower.com NCE30P25Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P25Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -30V,ID = -25A RDS(ON)

 8.11. Size:364K  ncepower
 nce30p12s.pdf

Pb Free Product http //www.ncepower.com NCE30P12S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P12S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -1

 8.12. Size:749K  ncepower
 nce30p85k.pdf

http //www.ncepower.com NCE30P85K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P85K uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for high current load applications. General Features V = -30V,I = -85A Schematic diagram DS D R =5.3m @ V = -10V (Typ) DS(ON) GS R =7.6m @ V = -4.5V (

 8.13. Size:625K  ncepower
 nce30p60g.pdf

http //www.ncepower.com NCE30P60G NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P60G uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =-30V,I =-60A DS D R

 8.14. Size:264K  ncepower
 nce30p06j.pdf

Pb Free Product http //www.ncepower.com NCE30P06J NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE30P06J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic diag

 8.15. Size:314K  ncepower
 nce30p55l.pdf

NCE30P55L http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P55L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-30V,ID =-55A Schematic diagram RDS(ON)

 8.16. Size:421K  ncepower
 nce30p30k.pdf

Pb Free Product http //www.ncepower.com NCE30P30K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-30V,ID =-30A RDS(ON)

 8.17. Size:277K  ncepower
 nce30p10s.pdf

http //www.ncepower.com NCE30P10S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P10S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -10A RDS(ON)

 8.18. Size:358K  ncepower
 nce30p30g.pdf

Pb Free Product http //www.ncepower.com NCE30P30G NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P30G uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -30A RDS(ON)

 8.19. Size:342K  ncepower
 nce30p15as.pdf

 8.20. Size:345K  ncepower
 nce30p20q.pdf

http //www.ncepower.com NCE30P20Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P20Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -20A RDS(ON)

 8.21. Size:301K  ncepower
 nce30p16q.pdf

Pb Free Product http //www.ncepower.com NCE30P16Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P16Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -16A RDS(ON)