NCE30PD08S Specs and Replacement
Type Designator: NCE30PD08S
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ -
Output Capacitance: 350 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SOP-8
- MOSFET ⓘ Cross-Reference Search
NCE30PD08S datasheet
..1. Size:343K ncepower
nce30pd08s.pdf 
NCE30PD08S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30PD08S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. Schematic diagram General Features VDS = -30V,ID = -8A RDS(ON) ... See More ⇒
8.1. Size:334K ncepower
nce30p25s.pdf
Pb Free Product http //www.ncepower.com NCE30P25S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P25S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features Schematic diagram VDS = -30V,ID = -25A RDS(ON) ... See More ⇒
8.2. Size:577K ncepower
nce30p55k.pdf
NCE30P55K http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P55K uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for high current load applications. General Features V =-30V,I =-55A DS D Schematic diagram R ... See More ⇒
8.3. Size:729K ncepower
nce30p40k.pdf
http //www.ncepower.com NCE30P40K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P40K uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for high current load applications. General Features V = -30V,I = -40A Schematic diagram DS D R =7.8m @ V = -10V (Typ) DS(ON) GS R =11.5m @ V = -4.5V ... See More ⇒
8.4. Size:348K ncepower
nce30p50g.pdf
Pb Free Product http //www.ncepower.com NCE30P50G NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P50G uses advanced trench technology and D design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. G General Features VDS =-30V,ID =-50A S RDS(ON) ... See More ⇒
8.5. Size:341K ncepower
nce30p15s.pdf
Pb Free Product http //www.ncepower.com NCE30P15S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P15S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -15A RDS(ON) ... See More ⇒
8.6. Size:256K ncepower
nce30p28q.pdf
http //www.ncepower.com NCE30P28Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P28Q uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. Schematic diagram General Features VDS = -30V,ID = -28A RDS(ON) ... See More ⇒
8.7. Size:710K ncepower
nce30p12bs.pdf
http //www.ncepower.com NCE30P12BS NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P12BS uses advanced trench technology to provide excellent R , low gate charge and operation with DS(ON) gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features V = -30V,I = -12A Schematic diagram DS D R ... See More ⇒
8.9. Size:735K ncepower
nce30p25bq.pdf
http //www.ncepower.com NCE30P25BQ NCE P-Channel Enhancement Mode Power MOSFET General Features V = -30V,I = -25A DS D Description R ... See More ⇒
8.10. Size:682K ncepower
nce30p25q.pdf
http //www.ncepower.com NCE30P25Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P25Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -30V,ID = -25A RDS(ON) ... See More ⇒
8.11. Size:364K ncepower
nce30p12s.pdf
Pb Free Product http //www.ncepower.com NCE30P12S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P12S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -1... See More ⇒
8.12. Size:749K ncepower
nce30p85k.pdf
http //www.ncepower.com NCE30P85K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P85K uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for high current load applications. General Features V = -30V,I = -85A Schematic diagram DS D R =5.3m @ V = -10V (Typ) DS(ON) GS R =7.6m @ V = -4.5V (... See More ⇒
8.13. Size:625K ncepower
nce30p60g.pdf
http //www.ncepower.com NCE30P60G NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P60G uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =-30V,I =-60A DS D R ... See More ⇒
8.14. Size:264K ncepower
nce30p06j.pdf
Pb Free Product http //www.ncepower.com NCE30P06J NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE30P06J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic diag... See More ⇒
8.15. Size:314K ncepower
nce30p55l.pdf
NCE30P55L http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P55L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-30V,ID =-55A Schematic diagram RDS(ON) ... See More ⇒
8.16. Size:421K ncepower
nce30p30k.pdf
Pb Free Product http //www.ncepower.com NCE30P30K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-30V,ID =-30A RDS(ON) ... See More ⇒
8.17. Size:277K ncepower
nce30p10s.pdf
http //www.ncepower.com NCE30P10S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P10S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -10A RDS(ON) ... See More ⇒
8.18. Size:358K ncepower
nce30p30g.pdf
Pb Free Product http //www.ncepower.com NCE30P30G NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P30G uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -30A RDS(ON) ... See More ⇒
8.20. Size:345K ncepower
nce30p20q.pdf
http //www.ncepower.com NCE30P20Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P20Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -20A RDS(ON) ... See More ⇒
8.21. Size:301K ncepower
nce30p16q.pdf
Pb Free Product http //www.ncepower.com NCE30P16Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P16Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -16A RDS(ON) ... See More ⇒
Detailed specifications: NCE20ND08U, NCE20ND15Q, NCE20PD05, NCE25P60K, NCE3068Q, NCE30H10BK, NCE30H28, NCE30ND07BS, IRF1407, NCE3404X, NCE4003A, NCE40H14, NCE40ND25Q, NCE4606C, NCE4612SP, NCE4614B, NCE4614C
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