NCE4003A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NCE4003A Datasheet (PDF)

..1. Size:696K ncepower
nce4003a.pdf pdf_icon

http://www.ncepower.comNCE4003ANCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE4003A uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SGeneral FeaturesSchematic Diagram V =40V,I =3ADS DR = 32m @ V =10V(Typ)DS(ON) GSR = 43m

7.1. Size:681K ncepower
nce4003.pdf pdf_icon

http://www.ncepower.comNCE4003NCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE4003 uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SGeneral FeaturesSchematic Diagram V =40V,I =3ADS DR = 33m @ V =10V(Typ)DS(ON) GSR = 52m @

8.1. Size:368K ncepower
nce4009s.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE4009S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4009S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel VDS =4

8.2. Size:656K ncepower
nce4005.pdf pdf_icon

http://www.ncepower.comNCE4005NCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE4005 uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SGeneral FeaturesSchematic Diagram V =40V,I =5ADS DR = 22m @ V =10V(Typ)DS(ON) GSR = 36m @

Otros transistores... NCE20PD05 , NCE25P60K , NCE3068Q , NCE30H10BK , NCE30H28 , NCE30ND07BS , NCE30PD08S , NCE3404X , 75N75 , NCE40H14 , NCE40ND25Q , NCE4606C , NCE4612SP , NCE4614B , NCE4614C , NCE4618SP , NCE4953A .