All MOSFET. NCE4003A Datasheet

 

NCE4003A MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE4003A
   Marking Code: 4003A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.2 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
   Package: SOT-23

 NCE4003A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE4003A Datasheet (PDF)

 ..1. Size:696K  ncepower
 nce4003a.pdf

NCE4003A NCE4003A

http://www.ncepower.comNCE4003ANCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE4003A uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SGeneral FeaturesSchematic Diagram V =40V,I =3ADS DR = 32m @ V =10V(Typ)DS(ON) GSR = 43m

 7.1. Size:681K  ncepower
 nce4003.pdf

NCE4003A NCE4003A

http://www.ncepower.comNCE4003NCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE4003 uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SGeneral FeaturesSchematic Diagram V =40V,I =3ADS DR = 33m @ V =10V(Typ)DS(ON) GSR = 52m @

 8.1. Size:368K  ncepower
 nce4009s.pdf

NCE4003A NCE4003A

Pb Free Producthttp://www.ncepower.com NCE4009S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4009S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel VDS =4

 8.2. Size:656K  ncepower
 nce4005.pdf

NCE4003A NCE4003A

http://www.ncepower.comNCE4005NCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE4005 uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SGeneral FeaturesSchematic Diagram V =40V,I =5ADS DR = 22m @ V =10V(Typ)DS(ON) GSR = 36m @

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