NCE4618SP MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NCE4618SP datasheet

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Pb Free Product Halogen Free Compliance http //www.ncepower.com NCE4618SP NCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The NCE4618SP uses advanced trench technology to provide VSSS =20V,IS =6A excellent RSS(ON), low gate charge and operation with gate 2.5V drive voltages as low as 2.5V while retaining a 12V VGS

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nce4614b.pdf pdf_icon

http //www.ncepower.com NCE4614B N and P-Channel Enhancement Mode Power MOSFET Description The NCE4614B uses advanced trench technology to provide excellent R and low gate charge . The complementary DS(ON) MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-channel P-channel Schematic diagram General Features N-Channel V =40V,I

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Pb Free Product http //www.ncepower.com NCE4614 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4614 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =4

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nce4612sp.pdf pdf_icon

http //www.ncepower.com NCE4612SP NCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The NCE4612SP uses advanced trench technology to provide V =24V,I =6A SSS S excellent R , low gate charge and operation with gate SS(ON) 2.5V drive voltages as low as 2.5V while retaining a 12V V rating. It GS(MAX) Common-drain type is ES