NCE4618SP - описание и поиск аналогов

 

NCE4618SP. Аналоги и основные параметры

Наименование производителя: NCE4618SP

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.6 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 50 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm

Тип корпуса: CSP

Аналог (замена) для NCE4618SP

- подборⓘ MOSFET транзистора по параметрам

 

NCE4618SP даташит

 ..1. Size:294K  ncepower
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NCE4618SP

Pb Free Product Halogen Free Compliance http //www.ncepower.com NCE4618SP NCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The NCE4618SP uses advanced trench technology to provide VSSS =20V,IS =6A excellent RSS(ON), low gate charge and operation with gate 2.5V drive voltages as low as 2.5V while retaining a 12V VGS

 8.1. Size:1021K  ncepower
nce4614b.pdfpdf_icon

NCE4618SP

http //www.ncepower.com NCE4614B N and P-Channel Enhancement Mode Power MOSFET Description The NCE4614B uses advanced trench technology to provide excellent R and low gate charge . The complementary DS(ON) MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-channel P-channel Schematic diagram General Features N-Channel V =40V,I

 8.2. Size:531K  ncepower
nce4614.pdfpdf_icon

NCE4618SP

Pb Free Product http //www.ncepower.com NCE4614 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4614 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =4

 8.3. Size:575K  ncepower
nce4612sp.pdfpdf_icon

NCE4618SP

http //www.ncepower.com NCE4612SP NCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The NCE4612SP uses advanced trench technology to provide V =24V,I =6A SSS S excellent R , low gate charge and operation with gate SS(ON) 2.5V drive voltages as low as 2.5V while retaining a 12V V rating. It GS(MAX) Common-drain type is ES

Другие MOSFET... NCE3404X , NCE4003A , NCE40H14 , NCE40ND25Q , NCE4606C , NCE4612SP , NCE4614B , NCE4614C , IRF520 , NCE4953A , NCE50N540F , NCE50NF220D , NCE6004 , NCE60ND09AS , NCE60ND18G , NCE60ND20AK , NCE60ND45G .

History: CHM3055LAPAGP | HM4886E | IRFIB7N50APBF

 

 

 

 

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