NCE4953A Todos los transistores

 ..1. Size:331K  ncepower
 nce4953a.pdf

 7.1. Size:371K  ncepower
 nce4953.pdf

Pb Free Product http //www.ncepower.com NCE4953 NCE P-Channel Enhancement Mode Power MOSFET Description D1 D2 The NCE4953 uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a S1 S2 load switch or in PWM applications. Schematic diagram General Features VD

 7.2. Size:868K  cn vbsemi
 nce4953.pdf

NCE4953 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top View

 9.1. Size:290K  ncepower
 nce4963.pdf

Pb Free Product http //www.ncepower.com NCE4963 NCE P-Channel Enhancement Mode Power MOSFET D1 D2 Description The NCE4963 uses advanced trench technology to provide G1 G2 excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a S1 S2 load switch or in PWM applications. Schematic diagram General Features V =-20