Справочник MOSFET. NCE4953A

 

NCE4953A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE4953A
   Маркировка: 4953A
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 12 nC
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 150 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: SOP-8

 Аналог (замена) для NCE4953A

 

 

NCE4953A Datasheet (PDF)

 ..1. Size:331K  ncepower
 nce4953a.pdf

NCE4953A NCE4953A

Pb Free Producthttp://www.ncepower.com NCE4953ANCE P-Channel Enhancement Mode Power MOSFET Description D1D2The NCE4953A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2Schematic diagram General Features

 7.1. Size:371K  ncepower
 nce4953.pdf

NCE4953A NCE4953A

Pb Free Producthttp://www.ncepower.com NCE4953NCE P-Channel Enhancement Mode Power MOSFET Description D1D2The NCE4953 uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a S1 S2load switch or in PWM applications. Schematic diagram General Features VD

 7.2. Size:868K  cn vbsemi
 nce4953.pdf

NCE4953A NCE4953A

NCE4953www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top View

 9.1. Size:290K  ncepower
 nce4963.pdf

NCE4953A NCE4953A

Pb Free Producthttp://www.ncepower.comNCE4963NCE P-Channel Enhancement Mode Power MOSFETD1D2DescriptionThe NCE4963 uses advanced trench technology to provideG1 G2excellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aS1 S2load switch or in PWM applications.Schematic diagramGeneral Features V =-20

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