NCE65N680D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE65N680D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 81 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 6.7 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.7 nS
Cossⓘ - Capacitancia de salida: 15 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.68 Ohm
Encapsulados: TO-263
Búsqueda de reemplazo de NCE65N680D MOSFET
- Selecciónⓘ de transistores por parámetros
NCE65N680D datasheet
nce65n680d.pdf
NCE65N680D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.7 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13.5 nC power conversion, and indust
nce65n680f.pdf
NCE65N680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.7 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13.5 nC power conversion, and indust
nce65n680r.pdf
NCE65N680R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.7 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13.5 nC power conversion, and indust
nce65n680k.pdf
NCE65N680K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.7 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13.5 nC power conversion, and indust
Otros transistores... NCE60NF200T, NCE60NF420, NCE60NF420D, NCE60NF420F, NCE60NF420I, NCE60NF420K, NCE60P14K, NCE60P82AF, IRF9640, NCE65N680F, NCE65N680I, NCE65N680K, NCE65N680R, NCE65NF130, NCE65NF130D, NCE65NF130F, NCE65NF130LL
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10 | AUD069N10A | AUD062N08BG | AUD060N08AG | AUD060N055 | AUD056N08BGL | AUB062N08BG
Popular searches
fhp40n20 | 2n3035 transistor | 2sb649a | 2sd188 | k b778 transistor | 2n5133 datasheet | 2sa726 transistor | 7506 mosfet